PK60N512VMD100 Freescale Semiconductor, PK60N512VMD100 Datasheet - Page 33
PK60N512VMD100
Manufacturer Part Number
PK60N512VMD100
Description
IC ARM CORTEX MCU 512K 144-MAP
Manufacturer
Freescale Semiconductor
Series
Kinetisr
Specifications of PK60N512VMD100
Core Processor
ARM Cortex-M4
Core Size
32-Bit
Speed
100MHz
Connectivity
CAN, EBI/EMI, Ethernet, I²C, IrDA, SDHC, SPI, UART/USART, USB, USB OTG
Peripherals
DMA, I²S, LVD, POR, PWM, WDT
Number Of I /o
100
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
128K x 8
Voltage - Supply (vcc/vdd)
1.71 V ~ 3.6 V
Data Converters
A/D 33x16b, D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
144-LBGA
Processor Series
Kinetis
Core
ARM Cortex M4
Data Ram Size
128 KB
Interface Type
UART, SPI, I2C, I2S, CAN
Maximum Clock Frequency
100 MHz
Number Of Programmable I/os
100
Operating Supply Voltage
1.71 V to 3.6 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PK60N512VMD100
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
PK60N512VMD100
Manufacturer:
FREESCALE
Quantity:
20 000
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
6.4.1.4 Reliability specifications
Freescale Semiconductor, Inc.
t
t
t
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
t
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
t
eewr16bers
eewr32bers
nvmretp10k
nvmretp100
nvmretd10k
n
Symbol
Symbol
nvmretp1k
nvmcycp
I
Symbol
DD_PGM
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Description
Description
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 19. Flash command timing specifications (continued)
Worst case programming current in program flash
Description
Table 20. Flash (FTFL) current and power specfications
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Table 21. NVM reliability specifications
Longword-write to FlexRAM for EEPROM operation
Table continues on the next page...
Program Flash
Preliminary
Data Flash
10 K
Min.
Min.
10
15
—
—
—
—
—
—
—
—
—
—
5
5
Peripheral operating requirements and behaviors
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
100
200
1
Max.
TBD
TBD
TBD
TBD
TBD
TBD
Max.
Typ.
1.5
2.5
2.7
3.7
10
—
—
—
—
—
cycles
years
years
years
years
Unit
Unit
ms
ms
ms
ms
ms
ms
ms
ms
μs
μs
Unit
mA
Notes
Notes
2
2
2
3
2
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