TSUS5400 Vishay, TSUS5400 Datasheet

Infrared Emitters 22 Degree 210mW

TSUS5400

Manufacturer Part Number
TSUS5400
Description
Infrared Emitters 22 Degree 210mW
Manufacturer
Vishay
Datasheets

Specifications of TSUS5400

Radiant Intensity
140 mW or sr
Beam Angle
22 deg
Maximum Forward Current
150 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.7 V
Wavelength
950 nm
Package / Case
T-1 3/4
Peak Wavelength
950nm
Forward Current If(av)
100mA
Rise Time
800ns
Fall Time Tf
800ns
Supply Voltage Range
1.3V
Viewing Angle
22°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSUS5400
Manufacturer:
TOSHIBA
Quantity:
2 250
Company:
Part Number:
TSUS5400
Quantity:
50
Company:
Part Number:
TSUS5400
Quantity:
70 000
DESCRIPTION
TSUS5400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
Document Number: 81056
Rev. 1.7, 25-Jun-09
amb
PRODUCT SUMMARY
COMPONENT
TSUS5400
TSUS5401
TSUS5402
ORDERING INFORMATION
ORDERING CODE
TSUS5400
TSUS5401
TSUS5402
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
Infrared Emitting Diode, 950 nm, GaAs
I
e
For technical questions, contact:
(mW/sr)
14
17
20
J-STD-051, leads 7 mm, soldered on PCB
PACKAGING
94 8390
Bulk
Bulk
Bulk
t ≤ 5 s, 2 mm from case
t
p
TEST CONDITION
/T = 0.5, t
t
p
= 100 µs
p
= 100 µs
ϕ (deg)
± 22
± 22
± 22
TSUS5400, TSUS5401, TSUS5402
emittertechsupport@vishay.com
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λ
• High reliability
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air transmission systems
• Emitter in transmissive sensors
• Emitter in reflective sensors
accordance to WEEE 2002/96/EC
with low forward voltage and small package requirements
REMARKS
SYMBOL
R
T
I
λ
T
T
I
FSM
V
P
FM
T
amb
thJA
I
P
stg
sd
F
950
950
950
R
V
j
(nm)
p
Vishay Semiconductors
= 950 nm
- 40 to + 100
- 40 to + 85
VALUE
150
300
170
100
260
230
2.5
5
PACKAGE FORM
T-1¾
T-1¾
T-1¾
t
r
www.vishay.com
800
800
800
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

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TSUS5400 Summary of contents

Page 1

... Infrared Emitting Diode, 950 nm, GaAs DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSUS5400 14 TSUS5401 17 TSUS5402 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS5400 TSUS5401 ...

Page 2

... TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors 180 160 140 120 100 R = 230 K/W 80 thJA 100 T - Ambient Temperature (°C) 21313 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Temperature coefficient of φ e Angle of half intensity ...

Page 3

... T - Ambient Temperature (°C) 94 7990 amb Fig Relative Forward Voltage vs. Ambient Temperature Document Number: 81056 For technical questions, contact: Rev. 1.7, 25-Jun-09 TSUS5400, TSUS5401, TSUS5402 Infrared Emitting Diode, 950 nm, GaAs 7997 Fig Radiant Intensity vs. Forward Current 7998 80 100 Fig Relative Radiant Intensity/Power vs. Ambient Temperature emittertechsupport@vishay ...

Page 4

... TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors 1.25 1.0 0.75 0.5 0. 100 900 950 λ - Wavelength (nm) 94 7994 Fig Relative Radiant Power vs. Wavelength PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5258.01-4 Issue: 5; 19.05.09 96 12119 www.vishay.com For technical questions, contact: 4 Infrared Emitting Diode, 950 nm, ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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