HIR5393C/L223 Everlight Electronics CO., LTD, HIR5393C/L223 Datasheet

Infrared Emitters 850nm, 0.5 Watt 1.9V, 350mA

HIR5393C/L223

Manufacturer Part Number
HIR5393C/L223
Description
Infrared Emitters 850nm, 0.5 Watt 1.9V, 350mA
Manufacturer
Everlight Electronics CO., LTD
Datasheet

Specifications of HIR5393C/L223

Beam Angle
25 deg
Radiant Intensity
200 mW/sr
Maximum Power Dissipation
0.5 W
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Fall Time
7 ns
Forward Current
350 mA
Forward Voltage
1.5 V
Mounting Style
Through Hole
Operating Voltage
1.7 V
Rise Time
11 ns
Wavelength
850 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Technical Data Sheet
High Power Infrared LED
Features
Descriptions
Applications
Device Selection Guide
Everlight Electronics Co., Ltd.
Device No
LED Part No.
HIR5393C/L223
․Popular 10mm package.
․High radiant intensity
․Peak wavelength λp=850nm
․Low forward voltage
․Pb free
․The product itself will remain within RoHS compliant version.
․Soldering methods: Dip soldering.
․CCD Camera
․Infrared applied system
․EVERLIGHT’S Infrared Emitting Diode(HIR5393C/L223)
․The device is spectrally matched with phototransistor , photodiode
is a high intensity diode , molded in a water clear plastic
package.
and infrared receiver module.
D IH-539-096
Material
GaAlAs
Chip
http:\\www.everlight.com
Prepared date
Lens Color
Water Clear
1 2-28-2007
Rev 3
Prepared by
HIR5393C/L223
J aine Tsai
Page: 1 of 8

Related parts for HIR5393C/L223

HIR5393C/L223 Summary of contents

Page 1

... RoHS compliant version. ․Soldering methods: Dip soldering. Descriptions ․EVERLIGHT’S Infrared Emitting Diode(HIR5393C/L223 high intensity diode , molded in a water clear plastic package. ․The device is spectrally matched with phototransistor , photodiode and infrared receiver module. ...

Page 2

... Max LED. ․Bare copper alloy is exposed at tie-bar portion after cutting. Everlight Electronics Co., Ltd. Device No : D IH-539-096 ± ± ± ± ± ± ± http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 ± ± Rev 3 Page Prepared by : J aine Tsai ...

Page 3

... F I =350mA =20mA F I =20mA F I =20mA 175 200 254 290 http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 Rating Units mA 350 V 5 ℃ -40 ~ +100 ℃ -40 ~ +100 K/W 20 ℃ 260 ±5 W 0.5 Min. Typ. Max. 150 200 326 -- 470 -- -- ...

Page 4

... Everlight Electronics Co., Ltd. Device No : D IH-539-096 Fig.2 Spectral Distributio Rthj-a=50 °C/W 80 100 120 140 Fig.4 Forward Current 50 75 100 http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 n 100 790 810 830 850 870 890 vs. Forward Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1 ...

Page 5

... Forward Current 1000 100 -Forward Current (mA F Everlight Electronics Co., Ltd. Device No : D IH-539-096 0.9 0.8 0 http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 Fig.6 Relative Radiant Intensity vs. Angular Displacement -20 0 -10 1.0 0.6 0.4 0.2 0 Rev 3 Prepared by : J aine Tsai 0.2 0.4 0.6 Page ...

Page 6

... Test Hours/ Cycles 10secs 15mins 300Cycles 5mins 15mins 5mins 300Cycles 10secs 5mins 1000hrs 1000hrs =350mA 1000hrs F 1000hrs http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 Sample Failure Ac/Re Sizes Judgement Criteria 22pcs 0/1 ≧U×2 I 22pcs 0 ≦L×0.8 e ≧U×1 22pcs 0/1 U: ...

Page 7

... Device No : D IH-539-096 CPN: Customer’s Production Numb P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 Rev 3 Page Prepared by : J aine Tsai ...

Page 8

... Preheat temp. Bath temp. Bath time. Distance Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\www.everlight.com http:\\www.everlight.com Prepared date : 1 2-28-2007 HIR5393C/L223 DIP Soldering ℃ 100 Max. (60 sec Max.) 265 Max. 5 sec Max. 3mm Min. Rev 3 Page Prepared by : ...

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