SIR-341ST3F Rohm Semiconductor, SIR-341ST3F Datasheet
SIR-341ST3F
Manufacturer Part Number
SIR-341ST3F
Description
Infrared Emitters IR EMITTER FOR REMOTE CONTROLLER
Manufacturer
Rohm Semiconductor
Datasheet
1.SIR-341ST3FF.pdf
(3 pages)
Specifications of SIR-341ST3F
Beam Angle
+/- 16 deg
Radiant Intensity
18.1 mW/sr
Maximum Forward Current
75 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Forward Voltage
1.3 V
Lens Shape
Dome
Operating Voltage
1.3 V
Wavelength
940 nm
Package / Case
3.8 mm x 5.2 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIR-341ST3F
Manufacturer:
ROHM Semiconductor
Quantity:
1 995
Company:
Part Number:
SIR-341ST3F
Manufacturer:
ROHM
Quantity:
4 000
Infrared light emitting diode, top view type
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Features
1) Compact (3.1mm).
2) High efficiency, high output P
3) Wide radiation angle 1/216deg.
4) Peak wavelength well suited to silicon detectors (
5) Good current-optical output linearity.
6) Long life, high reliability.
Absolute maximum ratings (Ta = 25C)
Electrical and optical characteristics (Ta = 25C)
○
∗ Pulse width=0.1msec, duty ratio 1%
c
www.rohm.com
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
SIR-341ST3F
2010 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
O
8.4mW (I
Symbol
θ
tr·tf
P
Δλ
V
λ
Symbol
1 / 2
I
I
f
E
R
C
O
P
F
Topr
Tstg
I
V
P
FP
I
F
R
D
F
∗
50mA).
Min.
5.6
−
−
−
−
−
−
−
−
−25 to +85
−40 to +85
P
18.1
Typ.
940nm).
940
±16
8.4
1.3
1.0
1.0
40
Limits
−
100
500
75
5
Max.
1.5
10
−
−
−
−
−
−
−
1/2
mW/sr
MHz
Unit
mW
deg
nm
nm
μA
μs
V
Unit
mW
Dimensions (Unit : mm)
mA
mA
°C
°C
V
I
I
I
V
I
I
I
I
I
F
F
F
F
F
F
F
F
=50mA
=50mA
=50mA
R
=50mA
=50mA
=50mA
=50mA
=50mA
=3V
4−0.6
2−
0.5
1
φ3.8±0.3
(2.5)
φ3.5
Conditions
2
φ3.1±0.2
Notes:
1.
2. Dimension in parenthesis are
1
Unspecified tolerance
shall be ±0.2.
show for reference.
Anode
2010.06 - Rev.B
2
Cathode
Related parts for SIR-341ST3F
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
EMITTER IR 940NM T1
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
EMITTER IR 850NM T1 3/4
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Infrared Emitters CLEAR REMOTE IR EMIT DIRECT MOUNTING TYPE
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Infrared Emitters FLAT SIDE IR EMITTER
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Infrared Emitters IR LED FOR REMOTE CONTROLLER
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Infrared Emitters IR LED HIGH OUTPUT
Manufacturer:
Rohm Semiconductor
Datasheet:
Part Number:
Description:
Infrared light emitting diode/ top view type
Manufacturer:
Rohm
Datasheet:
Part Number:
Description:
Infrared light emitting diode/ top view type
Manufacturer:
Rohm
Datasheet:
Part Number:
Description:
Infrared Emittng Dode Led
Manufacturer:
Seoul Semiconductor
Datasheet:
Part Number:
Description:
Infrared light emitting diode, top view type
Manufacturer:
ROHM [Rohm]
Datasheet:
Part Number:
Description:
Sir Modulator/demodulator
Manufacturer:
Vishay
Datasheet:
SIR-341ST3F Summary of contents
Page 1
... Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. ...
Page 2
... SIR-341ST3F Electrical and optical characteristic curves 100 100 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Forward current falloff 100 (mA) FORWARD CURRENT : I F Fig.4 Emitting strength vs. forward current 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 100 10° 20° 30° 40° 50° 60° 70° 80° 90° ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...