SFH 310 FA-2/3 OSRAM Opto Semiconductors Inc, SFH 310 FA-2/3 Datasheet - Page 3

• Manufacturer Part Number: SFH 310 FA-2/3
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 310 FA-2/3

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 50nA
• Wavelength: 880nm
• Viewing Angle: 50°
• Power - Max: 165mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3596

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2008-11-06
CE
= 10% von
= 10% of
= 10 V,
V
S
CE
E
max
T
S
A
= 0
max
= 0 V,
= 25 °C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
CEO
S max
CE
×
×
3
B
W
SFH 310
880
450 … 1100
0.11
0.5 × 0.5
± 25
7.5
1 (≤ 50)
Value
Wert
SFH 310, SFH 310 FA
SFH 310 FA
890
740 … 1100
0.11
0.5 × 0.5
± 25
7.5
1 (≤ 50)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
2