SFH 313 FA OSRAM Opto Semiconductors Inc, SFH 313 FA Datasheet - Page 4

• Manufacturer Part Number: SFH 313 FA
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 313 FA

• Maximum Power Dissipation: 200 mW
• Maximum Dark Current: 3 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P1674

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
I
E
1)
1)
Directional Characteristics
S
2007-03-30
100
C
C
rel
50
60
70
80
90
e
e
= 1 mA,
=
I
I
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
=
I
PCEmin
f
1.0
(ϕ)
40
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
0.8
1)
V
CC
× 0.3,
30
= 5 V,
0.6
2
2
,
V
20
CE
0.4
R
= 5 V
L
10
= 1 kΩ
1.0
0.8
0.6
0.4
0.2
0
0
0
20
Symbol
Symbol
I
t
V
r
PCE
,
CEsat
t
40
f
60
-1
2.5 … 5
8
150
80
100
4
OHF02330
120
-2
4 … 8
10
150
Value
Wert
-3
6.3 … 12.5
12
150
SFH 313, SFH 313 FA
-4
14
150
≥ 10
Einheit
Unit
mA
μs
mV