SFH 314 OSRAM Opto Semiconductors Inc, SFH 314 Datasheet - Page 3

• Manufacturer Part Number: SFH 314
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 314

• Maximum Power Dissipation: 200 mW
• Maximum Dark Current: 3 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1 3/4
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 7V
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Dark Current (max): 200nA
• Power Dissipation: 200mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 80deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P1668

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessungen der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2007-04-03
CE
= 10% von
= 10% of
= 10 V,
V
S
CE
E
max
T
S
= 0
A
max
= 5 V,
= 25 °C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
CEO
S max
CE
×
×
3
B
W
SFH 314
850
460 … 1080
0.55
1 × 1
± 40
10
3 (≤ 200)
Value
Wert
SFH 314, SFH 314 FA
SFH 314 FA
870
740 … 1080
0.55
1 × 1
± 40
10
3 (≤ 200)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
2