SFH 320-3/4-Z OSRAM Opto Semiconductors Inc, SFH 320-3/4-Z Datasheet - Page 4

• Manufacturer Part Number: SFH 320-3/4-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: TOPLEDr

Specifications of SFH 320-3/4-Z

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PLCC-2
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 50nA
• Wavelength: 980nm
• Viewing Angle: 120°
• Power - Max: 165mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A1781

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
SFH 320:
E
light A,
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
1)
1)
Directional Characteristics
2007-05-10
100
C
C
50
60
70
80
90
e
v
e
= 1 mA,
=
I
I
= 0.1 mW/cm
= 1000 Ix, Normlicht/standard
= 0.1 mW/cm
PCEmin
PCEmin
I
PCEmin
1.0
40
V
CE
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
0.8
1)
V
= 5 V
CC
× 0.3,
30
= 5 V,
0.6
2
2
,
V
CE
20
0.4
R
= 5 V
L
= 1 kΩ
10
ϕ
S
1.0
0.8
0.6
0.4
0.2
0
0
0
rel
=
20
f
(ϕ)
40
Symbol
Symbol
I
I
t
V
r
PCE
PCE
,
CEsat
t
f
60
80
SFH 320
/FA
≥ 16
–
7
150
4
100
OHF01402
120
-2
16 … 32
420
6
150
Value
Wert
-3
25 … 50
650
7
150
SFH 320, SFH 320 FA
-4
40 … 80
1000
8
150
Einheit
Unit
µA
µA
µs
mV