SFH 309 FA-4/5 OSRAM Opto Semiconductors Inc, SFH 309 FA-4/5 Datasheet - Page 2

• Manufacturer Part Number: SFH 309 FA-4/5
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr
• Series: -r

Specifications of SFH 309 FA-4/5

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 200 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 200nA
• Wavelength: 900nm
• Viewing Angle: 24°
• Power - Max: 165mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 15mA
• Collector-emitter Sat Volt (max): 0.2V
• Dark Current (max): 200nA
• Light Current: 4500/7200uA
• Rise Time: 7000/8000ns
• Fall Time: 7000/8000ns
• Power Dissipation: 165mW
• Peak Wavelength: 900nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3591

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2007-04-02
T
A
= 25 °C
Symbol
Symbol
T
V
I
I
P
R
C
CS
2
op
CE
tot
thJA
;
T
stg
Wert
Value
– 40 … + 100
35
15
75
165
450
SFH 309, SFH 309 FA
Einheit
Unit
°C
V
mA
mA
mW
K/W