TEFT4300 Vishay, TEFT4300 Datasheet

Photodetector Transistors 70V 100mW 925nm

TEFT4300

Manufacturer Part Number
TEFT4300
Description
Photodetector Transistors 70V 100mW 925nm
Manufacturer
Vishay
Type
IR Chipr
Datasheets

Specifications of TEFT4300

Maximum Power Dissipation
100 mW
Maximum Dark Current
200 nA
Package / Case
T-1
Transistor Polarity
NPN
Wavelength Typ
925nm
Power Consumption
100mW
Viewing Angle
30°
No. Of Pins
2
Light Current
3.2mA
Dark Current
200nA
C-e Breakdown Voltage
70V
Sensitivity
30 °
Package
2T-1
Phototransistor Type
Phototransistor
Polarity
NPN
Lens Shape Type
Domed
Lens Dimensions
3 mm
Cut-off Filter
Visible Cut-off
Viewing Orientation
Top View
Half Intensity Angle Degrees
60 °
Maximum Emitter Collector Voltage
5 V
Maximum Collector Current
50 mA
Peak Wavelength
925 nm
Transistor Case Style
T-1
Current Ic Typ
3.2mA
Fall Time Tf
1.5µs
Half Angle
30°
Lead Spacing
2.54mm
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
200nA
Wavelength
925nm
Power - Max
100mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TEFT4300
Manufacturer:
VISHAY
Quantity:
157
Part Number:
TEFT4300
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TEFT4300
Quantity:
70 000
DESCRIPTION
TEFT4300 is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1 plastic package with daylight blocking
filter. Filter bandwitdth is matched with 900 nm to 950 nm IR
emitters.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
Document Number: 81549
Rev. 1.5, 16-Sep-08
amb
PRODUCT SUMMARY
COMPONENT
TEFT4300
ORDERING INFORMATION
ORDERING CODE
TEFT4300
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
PACKAGING
Connected with Cu wire, 0.14 mm
94 8636-2
I
ca
Bulk
3.2
(mA)
t ≤ 3 s, 2 mm from case
t
p
TEST CONDITION
/T = 0.5, t
T
amb
≤ 55 °C
p
≤ 10 ms
MOQ: 5000 pcs, 5000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
• Fast response times
• Angle of half sensitivity: ϕ = ± 30°
• Package matched with IR emitter series TSUS4300 and
• Lead
APPLICATIONS
• Optical switches
• Counters and sorters
• Interrupters
• Encoders
• Position sensors
emitters
TSAL4400
RoHS 2002/95/EC and WEEE 2002/96/EC
2
REMARKS
ϕ (deg)
(Pb)-free
± 30
SYMBOL
V
V
R
T
T
I
T
P
CEO
ECO
I
CM
T
amb
thJA
stg
C
sd
V
j
component
Vishay Semiconductors
- 40 to + 100
- 40 to + 100
VALUE
100
100
100
260
450
70
50
5
PACKAGE FORM
in
875 to 1000
λ
TEFT4300
0.5
accordance
T-1
(nm)
www.vishay.com
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
with
423

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TEFT4300 Summary of contents

Page 1

... Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION TEFT4300 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwitdth is matched with 900 nm to 950 nm IR emitters. PRODUCT SUMMARY COMPONENT TEFT4300 Note Test condition see table “Basic Characteristics” ...

Page 2

... TEFT4300 Vishay Semiconductors 125 100 450 K/W thJA 8308 T - Ambient Temperature (°C) amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity ...

Page 3

... Fig Collector Emitter Capacitance vs. Collector Emitter Voltage Document Number: 81549 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.5, 16-Sep- Fig Turn-on/Turn-off Time vs. Collector Current 100 Fig Relative Spectral Sensitivity vs. Wavelength 100 Fig Relative Radiant Sensitivity vs. Angular Displacement TEFT4300 Vishay Semiconductors 100 Ω λ = 950 off 2 ...

Page 4

... TEFT4300 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters E 0.6 ± 0.15 2.54 nom. Drawing-No.: 6.544-5269.01-4 Issue: 4; 01.12.99 96 12172 www.vishay.com For technical questions, contact: detectortechsupport@vishay.com 426 Silicon NPN Phototransistor, RoHS Compliant 3.2 ± 0.1 C Chip position ± 0.1 3 Area not plane + 0.15 0.4 - 0.05 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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