OP580 Optek, OP580 Datasheet - Page 3

• Manufacturer Part Number: OP580
• Description: Photodetector Transistors Phototransistor
• Manufacturer: Optek

Specifications of OP580

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Breakdown Voltage: 30 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Package / Case: PLCC-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Phototransistor
OP580
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
1000
100
160
140
120
100
10
80
60
40
20
1
0
-25
0
Normalized at E
ditions: V
λ = 935 nm, T
Conditions: Ee = 0 mW/
cm
Relative On-State Collector Current vs
Collector-Emitter Dark Current vs
1
2
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
V
CE
0
= 10V
CE
2
EE rradiance (mW/cm
= 5 V,
Temperature (°C)
A
Temperature
= 25° C
E
3
Irradiance
= 5 mW/cm
25
4
FAX: [phone] [e-mail] www.optekinc.com
2
50
5
Con-
2
6
)
75
7
100
8
140
110
100
130
120
1.4
1.2
1.0
0.8
0.6
0.4
0.2
90
80
70
-25
0
Relative On-State Collector Current vs
Relative On-State Collector Current vs
Normalized at T
Conditions: V
λ = 935 nm, T
0.1
0
Collector-Emitter Voltage (V)
Collector-Emitter Voltage
Temperature (°C)
CE
A
Temperature
0.2
= 25° C
25
A
= 5 V,
= 25° C .
0.3
50
Issue 1.3
0.4
75
80°C
Page 3 of 3
2 mW/cm
1 mW/cm
-40°C
05/10
0.5
100
2
2