BPV11F Vishay, BPV11F Datasheet - Page 4
BPV11F
Manufacturer Part Number
BPV11F
Description
Photodetector Transistors 15 Degree 150mW
Manufacturer
Vishay
Type
IR Chipr
Specifications of BPV11F
Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Collector- Emitter Voltage Vceo Max
70 V
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
930nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
9mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
930nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Transistor Case Style
T-1 3/4 (5mm)
Svhc
No SVHC (20-Jun-2011)
Current Ic Typ
9mA
Rohs Compliant
Yes
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
930nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
BPV11F
Vishay Semiconductors
www.vishay.com
4
Figure 11. Relative Radiant Sensitivity vs. Angular Displacement
94 8253
94 8258
Figure 10. Relative Spectral Sensitivity vs. Wavelength
Figure 9. Turn On/Turn Off Time vs. Collector Current
94 8248
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
12
10
8
6
4
2
0
0
800
0
0.6
0.4
I
4
C
- Collector Current (mA)
λ
900
0.2
– Wavelength (nm)
8
0
V
R
λ
0°
CE
L
= 950 nm
= 100 Ω
= 5 V
0.2
1000
12
10°
t
0.4
on
t
off
20°
16
0.6
1100
30°
40°
50°
60°
70°
80°
Document Number 81505
Rev. 1.5, 13-Nov-06