BPV11 Vishay, BPV11 Datasheet

Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm

BPV11

Manufacturer Part Number
BPV11
Description
Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
Manufacturer
Vishay
Type
Chipr
Datasheets

Specifications of BPV11

Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
10mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Transistor Case Style
T-1 3/4
Current Ic Typ
10mA
Fall Time Tf
3.8µs
Half Angle
15°
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
850nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Water Clear
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
850nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV11
Manufacturer:
ANPEC
Quantity:
850
Part Number:
BPV11F
Manufacturer:
NEC
Quantity:
15
Company:
Part Number:
BPV11F
Quantity:
3 000
Silicon NPN Phototransistor
Description
BPV11 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard T-1¾ plastic
package.
Due to its waterclear epoxy lens the device is sensi-
tive to visible and near infrared radiation.
The viewing angle of ±15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
Features
Absolute Maximum Ratings
T
Document Number 81504
Rev. 1.4, 08-Mar-05
• Very high photo sensitivity
• Standard T-1¾ (∅ 5 mm) package with clear lens
• Angle of half sensitivity ϕ = ± 15°
• Base terminal available
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
t
T
t ≤ 5 s, 2 mm from body
p
amb
/T = 0.5, t
≤ 47 °C
Test condition
p
≤ 10 ms
Applications
Detector for industrial electronic circuitry, measure-
ment and control
Symbol
V
V
V
R
T
P
I
T
CBO
CEO
EBO
CM
I
thJA
T
stg
C
sd
tot
j
12785
- 55 to + 100
Vishay Semiconductors
Value
100
150
100
260
350
80
70
50
5
BPV11
www.vishay.com
K/W
Unit
mW
mA
mA
°C
°C
°C
V
V
V
1

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BPV11 Summary of contents

Page 1

... Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensi- tive to visible and near infrared radiation. The viewing angle of ±15° makes it insensible to ambient straylight ...

Page 2

... BPV11 Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Collector Emitter Breakdown Voltage Collector-emitter dark current Current Gain Collector-emitter capacitance MHz Collector - base capacitance MHz Optical Characteristics °C, unless otherwise specified amb Parameter Collector Light Current mW/ Angle of Half Sensitivity ...

Page 3

... Figure 6. Amplification vs. Collector Current 0 8246 Figure 7. Collector Base Capacitance vs. Collector Base Voltage 100 0.1 94 8247 Figure 8. Collector Emitter Capacitance vs. Collector Emitter BPV11 Vishay Semiconductors V =5V CE 100 0 – Collector Current ( f=1MHz 100 – Collector Base Voltage ( f=1MHz 100 – Collector Emitter Voltage ( Voltage www.vishay.com 3 ...

Page 4

... BPV11 Vishay Semiconductors Ω R =100 L λ =950nm off – Collector Current ( 8253 C Figure 9. Turn On/Turn Off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 400 600 800 λ – Wavelength ( 8348 Figure 10. Relative Spectral Sensitivity vs. Wavelength 0° 10° 1.0 0.9 ...

Page 5

... Package Dimensions in mm Document Number 81504 Rev. 1.4, 08-Mar-05 BPV11 Vishay Semiconductors 9612200 www.vishay.com 5 ...

Page 6

... BPV11 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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