EL-PT958-8C Everlight Electronics CO., LTD, EL-PT958-8C Datasheet - Page 3

• Manufacturer Part Number: EL-PT958-8C
• Description: Photodetector Transistors PHOTO TRANSISTOR 1.6mm, 400-1200nm
• Manufacturer: Everlight Electronics CO., LTD

Specifications of EL-PT958-8C

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Wavelength: 860 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PT958-8C

MODEL NO:
Absolute Maximum Ratings
Electro-Optical Characteristics
Response Time
EVERLIGHT
C-E Saturation Voltage
Collector Dark Current
Collector Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature
(1/16 inch from body for 5 seconds)
Half sensitivity angle
Range of Spectral
Collector Current
Peak Sensitivity
Wavelength of
C:\Data sheet\PT\PT958-8C.doc
Parameter
Bandwidth
Rise Time
Fall Time
Item
PT958-8C
Symbol Min
V
2θ1/2
Device Number:
I
I
λ
EVERLIGHT ELECTRONICS CO., LTD.
λp
CE(Sat)
c(on)
CEO
t
t
r
f
0.5
210
-
-
-
-
-
-
Symbol
V
V
Topr
Tstg
Tsol
Pc
Ic
CEO
ECO
400…1200
ECN:
Typ
860
±11
15
15
-
-
-
DPT-958-093
-25~+85
-40~+85
Rating
Max Unit
260
100
910
0.4
75
35
20
6
-
-
-
-
-
μSec
μSec
μA
Deg
nA
nm
nm
V
Ic=0.5mA,Ee=10mW/cm
REV:
V
V
Page:
CE
CE
(Ta=25℃)
Unit
mW
mA
R
=20V,Ee=0mW/c ㎡
℃
℃
℃
Condition
V
V
=5V,Ee=1mW/cm
V
Ic=1mA
L
=1000Ω
(Ta=25℃)
CE
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=5V
3/7
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2
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