VEMD2020X01 Vishay, VEMD2020X01 Datasheet - Page 2

• Manufacturer Part Number: VEMD2020X01
• Description: Photodiodes PIN Photo Diode
• Manufacturer: Vishay
• Type: PIN Photodioder

Specifications of VEMD2020X01

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Half Intensity Angle Degrees: 15 deg
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 12 uA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Mounting Style: SMD/SMT
• Wavelength Typ: 940nm
• Half Angle: 15°
• Dark Current: 1nA
• Diode Case Style: SMD
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Reverse Voltage Vr: 60V
• Breakdown Voltage Vbr: 32V
• Reverse Voltage Vr Max: 60V
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 10nA
• Power Dissipation: 215mW
• Light Current: 12uA
• Rise Time: 100ns
• Fall Time: 100ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

VEMD2000X01, VEMD2020X01
Vishay Semiconductors
BASIC CHARACTERISTICS (T
www.vishay.com
2
BASIC CHARACTERISTICS (T
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
94 8427
1000
100
10
1
20
T
amb
- Ambient Temperature (°C)
40
k
o
60
For technical questions, contact:
V
R
amb
= 10 V
80
amb
E
E
E
E
E
V
V
e
e
e
e
e
R
R
= 1 mW/cm
= 25 °C, unless otherwise specified)
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
= 0 V, f = 1 MHz, E = 0
= 5 V, f = 1 MHz, E = 0
= 25 °C, unless otherwise specified)
TEST CONDITION
R
R
I
R
V
= 10 V, R
= 10 V, R
100
R
= 100 μA, E = 0
 = 820 nm
 = 820 nm
I
= 10 V, E = 0
F
Silicon PIN Photodiode
V
= 50 mA
R
= 5 V
2
2
2
2
2
,  = 950 nm,
,  = 950 nm
,  = 950 nm
,  = 950 nm
,  = 950 nm
L
L
= 1 k,
= 1 k,
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Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
TK
V
TK

C
C
V
V
I
I

(BR)
I

94 8416
ro
0.5
t
t
ra
k
F
o
p
r
f
D
D
Vo
Ik
1.4
1.2
1.0
0.8
0.6
0
MIN.
8.5
32
T
amb
20
- Ambient Temperature (°C)
750 to 1050
λ = 950 nm
40
V
TYP.
- 2.6
± 15
350
940
100
100
1.3
0.1
R
11
12
1
1
4
= 5 V
60
Document Number: 81962
MAX.
80
10
17
Rev. 1.2, 22-Mar-11
100
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
pF
pF
μA
μA
ns
ns
V
V