BPV22NF Vishay, BPV22NF Datasheet

Photodiodes 60 Degree 215mW

BPV22NF

Manufacturer Part Number
BPV22NF
Description
Photodiodes 60 Degree 215mW
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheets

Specifications of BPV22NF

Lens Type
Epoxy
Photodiode Material
Silicon
Peak Wavelength
940 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
85 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
Side Looker
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Wavelength Typ
940nm
Sensitivity
0.6A/W
Half Angle
60°
Dark Current
2nA
Diode Case Style
Side Looking
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Forward Voltage
1.3V
Active Area
7.5mm2
Breakdown Voltage Vbr
60V
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Responsivity
0.6A/W
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
85uA
Rise Time
100ns
Fall Time
100ns
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
Side View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

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Manufacturer
Quantity
Price
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BPV22NF
Manufacturer:
Vishay
Quantity:
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Part Number:
BPV22NF
Manufacturer:
VISHAY
Quantity:
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Part Number:
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Silicon PIN Photodiode
Description
BPV22NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (λ
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80 %.
Features
Absolute Maximum Ratings
T
Document Number 81509
Rev. 1.6, 13-Nov-06
• Large radiant sensitive area (A = 7.5 mm
• Wide viewing angle ϕ = ± 60°
• Improved sensitivity
• Fast response times
• Low junction capacitance
• Plastic package with universal IR filter
• Option "L": long lead package optional available
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
amb
with suffix "L"; e.g.: BPV23FL
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
p
= 950 nm, s
rel
(λ = 875 nm) > 90 %).
T
t ≤ 5 s
amb
≤ 25 °C
Test condition
2
)
e4
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU.-,
TSI.-, or TSH.-Series). High sensitivity detector for
high data rate transmission systems.
The IR filter matches perfectly to the high speed infra-
red emitters in the 830 nm to 880 nm wavelength
range.
Symbol
R
T
T
T
V
P
amb
thJA
T
stg
sd
R
V
j
- 55 to + 100
- 55 to + 100
Vishay Semiconductors
Value
215
100
260
350
60
BPV22NF(L)
94 8633
www.vishay.com
K/W
Unit
mW
°C
°C
°C
°C
V
1

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BPV22NF Summary of contents

Page 1

... Silicon PIN Photodiode Description BPV22NF( high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR emitters (λ = 950 nm, s (λ = 875 nm) > 90 %). p rel ...

Page 2

... BPV22NF(L) Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward Voltage 100 µ Breakdown Voltage Reverse Dark Current MHz Diode capacitance MHz Serial Resistance R Optical Characteristics °C, unless otherwise specified amb Parameter Open Circuit Voltage mW/cm e Temp. Coefficient mW/cm ...

Page 3

... Rev. 1.6, 13-Nov-06 100 10 100 94 8412 Figure 4. Reverse Light Current vs. Reverse Voltage 100 948407 Figure 5. Diode Capacitance vs. Reverse Voltage 8426 Figure 6. Relative Spectral Sensitivity vs. Wavelength BPV22NF(L) Vishay Semiconductors 1 mW/cm 2 0.5 mW/cm 2 λ = 950 nm 2 0.2 mW/cm 2 0.1 mW/cm 0.05 mW/ 0.02 mW/cm 1 100 0.1 1 ...

Page 4

... BPV22NF(L) Vishay Semiconductors ° 0° 10 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 94 8413 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Package Dimensions in mm www.vishay.com 4 ° 20 30° 40° 50° 60° 70° 80° 0.6 0.4 9612205 Document Number 81509 Rev. 1.6, 13-Nov-06 ...

Page 5

... Package Dimensions in mm Document Number 81509 Rev. 1.6, 13-Nov-06 BPV22NF(L) Vishay Semiconductors 95 1 1475 www.vishay.com 5 ...

Page 6

... BPV22NF(L) Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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