BP 104 FAS-Z OSRAM Opto Semiconductors Inc, BP 104 FAS-Z Datasheet - Page 5

• Manufacturer Part Number: BP 104 FAS-Z
• Description: Photodiodes PHOTODIODE, SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: -r

Specifications of BP 104 FAS-Z

• Photodiode Material: Silicon
• Peak Wavelength: 880 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 20 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 34 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-SMT-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Wavelength: 880nm
• Output Type: Current
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.65A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2672

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-18
BP 104 FAS
BP 104 FASR
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
4.5 (0.177)
4.3 (0.169)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
4.5 (0.177)
4.3 (0.169)
6.7 (0.264)
6.2 (0.244)
6.7 (0.264)
6.2 (0.244)
Chip position
Chip position
5
1.6 (0.063)
1.6 (0.063)
Cathode lead
Cathode lead
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
±0.2 (0.008)
GEOY6861
±0.2 (0.008)
GPLY7049
BP 104 FAS, BP 104 FASR