VBP104FAS Vishay, VBP104FAS Datasheet - Page 3

• Manufacturer Part Number: VBP104FAS
• Description: Photodiodes 60V 215mW 65Deg
• Manufacturer: Vishay
• Type: PIN Photodioder

Specifications of VBP104FAS

• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Half Intensity Angle Degrees: 65 deg
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 35 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Wavelength Typ: 950nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: SMD
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Reverse Voltage Vr: 60V
• Breakdown Voltage Vbr: 60V
• Reverse Voltage Vr Max: 60V
• Rohs Compliant: Yes
• Forward Voltage Vf Max: 1.3V
• Featured Product: VBPW34x / VBP104x Series High-Speed PIN Photodiodes
• Wavelength: 950nm
• Output Type: Current On Typ, 35µA
• Package / Case: 2-SMD, Gull Wing
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 81169
Rev. 1.1, 20-Apr-10
Fig. 4 - Reverse Light Current vs. Reverse Voltage
94 8421
94 8422
Fig. 5 - Diode Capacitance vs. Reverse Voltage
94 8423
1000
100
Fig. 3 - Reverse Light Current vs. Irradiance
100
0.1
10
10
80
60
40
20
1
1
0
0.01
0.1
0.1
λ = 950 nm
E
V
V
R
e
R
- Irradiance (mW/cm
- Reverse Voltage (V)
- Reverse Voltage (V)
0.1
1
1
f = 1 MHz
E = 0
For technical questions, contact:
0.5 mW/cm
0.05 mW/cm
0.1 mW/cm
1 mW/cm
0.2 mW/cm
10
10
1
λ = 950 nm
V
R
2
= 5 V
)
2
2
2
2
2
100
100
Silicon PIN Photodiode
10
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Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
21743
94 8406
VBP104FAS, VBP104FASR
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
600
0.6
700
0.4
Vishay Semiconductors
λ - Wavelength (nm)
0.2
800
0°
0
900
10°
1000
20°
www.vishay.com
1100
30°
40°
50°
60°
70°
80°
3