BPW41N Vishay, BPW41N Datasheet - Page 3

• Manufacturer Part Number: BPW41N
• Description: Photodiodes 60V 215mW 950nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder
• Series: -r

Specifications of BPW41N

• Lens Type: Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 950 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 45 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: Side Looker
• Maximum Operating Temperature: + 100 C
• Wavelength Typ: 950nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: Side Looking
• No. Of Pins: 2
• Leaded Process Compatible: Yes
• Reverse Voltage Vr: 60V
• Capacitance: 70pF
• Active Area: 7.5mm2
• Breakdown Voltage Vbr: 60V
• Diode Type: Photodiode
• External Depth: 4mm
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 45uA
• Rise Time: 100ns
• Fall Time: 100ns
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPW41N
Vishay Semiconductors
www.vishay.com
392
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
94 8415
94 8408
948407
100
10
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
1
0
0
0.1
0.1
750
λ
= 950 nm
V
850
V
R
R
- Reverse Voltage (V)
- Wavelength (nm)
1
- Reverse Voltage (V)
1
f = 1 MHz
E = 0
950
For technical questions, contact: [e-mail]
10
10
1 mW/cm
0.05 mW/cm
0.02 mW/cm
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
1050
Silicon PIN Photodiode, RoHS Compliant
2
2
2
2
2
2
100
100
1150
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
94 8406
1.0
0.9
0.8
0.7
0.6
0.4
0.2
0°
0
10°
Document Number: 81522
20°
Rev. 1.5, 08-Sep-08
30°
40°
50°
60°
70°
80°