TEMD5120X01 Vishay, TEMD5120X01 Datasheet - Page 2

• Manufacturer Part Number: TEMD5120X01
• Description: Photodiodes 60V 215mW 940nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder

Specifications of TEMD5120X01

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 35 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: SMD-4
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Wavelength Typ: 940nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: SMD
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Size: 5mm X 4.24mm X 1.12mm
• Reverse Voltage Vr: 60V
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Forward Voltage: 1.3V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 35uA
• Rise Time: 100ns
• Fall Time: 100ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 4
• Package Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TEMD5120X01
Vishay Semiconductors
Note
T
BASIC CHARACTERISTICS
T
www.vishay.com
462
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
k
o
60
For technical questions, contact: [e-mail]
V
R
Silicon PIN Photodiode, RoHS Compliant, Released for
Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
= 10 V
E
E
E
E
E
V
V
80
e
e
e
e
e
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
R
R
I
R
V
= 10 V, λ = 950 nm
= 10 V, R
= 10 V, R
= 100 µA, E = 0
R
λ = 820 nm
λ = 820 nm
I
= 10 V, E = 0
F
V
100
= 50 mA
R
= 5 V
2
2
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
L
L
= 1 kΩ,
= 1 kΩ,
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
NEP
TK
λ
C
C
V
V
(BR)
I
I
λ
I
ϕ
t
t
ro
ra
0.5
k
r
D
D
p
f
F
o
Vo
Ik
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
25
T
20
amb
- Ambient Temperature (°C)
790 to 1050
4 x 10
λ = 950 nm
V
40
TYP.
- 2.6
± 65
350
940
100
100
0.1
R
48
17
32
35
1
2
= 5 V
-14
60
Document Number: 84680
MAX.
1.3
30
40
80
Rev. 1.5, 26-Feb-09
100
W/√Hz
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
µA
µA
pF
pF
ns
ns
V
V