BPW24R Vishay, BPW24R Datasheet - Page 2

• Manufacturer Part Number: BPW24R
• Description: Photodiodes 60V 210mW 900nm
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder
• Series: -r

Specifications of BPW24R

• Lens Type: Glass
• Photodiode Material: Silicon
• Peak Wavelength: 900 nm
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 210 mW
• Maximum Light Current: 60 uA
• Maximum Dark Current: 10 nA
• Maximum Rise Time: 7 ns
• Maximum Fall Time: 7 ns
• Package / Case: TO-18
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Wavelength Typ: 900nm
• Sensitivity: 0.6A/W
• Half Angle: 12°
• Dark Current: 2nA
• Diode Case Style: TO-18
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +125°C
• Mounting Type: Through Hole
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Responsivity: 0.6A/W
• Dark Current (max): 10nA
• Power Dissipation: 210mW
• Light Current: 60uA
• Rise Time: 7ns
• Fall Time: 7ns
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81520
Rev. 1.5, 11-Aug-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Absolute Spectral Sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8454
10
10
10
10
10
4
3
2
1
0
20
T
V
40
amb
R
= 50 V
- Ambient Temperature (°C)
Silicon PIN Photodiode, RoHS Compliant
k
o
60
80
For technical questions, contact: [e-mail]
V
V
R
R
E
E
E
E
100
V
= 20 V, R
= 20 V, R
V
V
e
e
e
e
R
R
R
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
= 20 V, f = 1 MHz, E = 0
= 0 V, f = 1 MHz, E = 0
= 5 V, f = 1 MHz, E = 0
TEST CONDITION
I
R
R
R
V
= 5 V, λ = 870 nm
= 5 V, λ = 900 nm
120
R
= 100 µA, E = 0
= 50 V, E = 0
E
V
L
L
A
R
= 50 Ω, λ = 820 nm
= 50 Ω, λ = 820 nm
= 1 klx
= 20 V
2
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
TK
s(λ)
s(λ)
λ
C
C
C
V
(BR)
I
I
λ
I
ϕ
0.5
t
t
ro
ra
k
r
94 8409
D
D
D
p
f
o
Vo
Ik
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
45
T
20
amb
- Ambient Temperature (°C)
Vishay Semiconductors
600 to 1050
λ = 950 nm
V
40
R
TYP.
0.60
0.55
± 12
200
450
900
3.8
2.5
0.1
= 5 V
- 2
11
55
60
2
7
7
60
80
MAX.
10
BPW24R
www.vishay.com
100
mV/K
UNIT
%/K
A/W
A/W
deg
mV
nm
nm
nA
µA
µA
pF
pF
pF
ns
ns
V
383