TLP621-2GRFT Toshiba, TLP621-2GRFT Datasheet - Page 3
TLP621-2GRFT
Manufacturer Part Number
TLP621-2GRFT
Description
Transistor Output Optocouplers X36 PHOTOCOUPLER
Manufacturer
Toshiba
Datasheet
1.TLP621GRFT.pdf
(10 pages)
Specifications of TLP621-2GRFT
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
2
Input Type
DC
Maximum Collector Emitter Voltage
55 V
Maximum Collector Emitter Saturation Voltage
200 mV (Typ)
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Package / Case
PDIP-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
•
•
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no. 40009302
(Note)
Creepage distance
Clearance
Insulation thickness
Maximum operating insulation voltage: 890 V
Highest permissible over voltage: 8000 V
When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)”
: 6.4 mm (min.)
: 6.4 mm (min.)
: 0.4 mm (min.)
7.62 mm pich
standard type
10.16 mm pich
(LF2) type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
PK
PK
3
TLP621,TLP621−2,TLP621−4
2007-10-01