TCDT1122G Vishay, TCDT1122G Datasheet - Page 2

• Manufacturer Part Number: TCDT1122G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 63-125%
• Manufacturer: Vishay

Specifications of TCDT1122G

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 90 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TCDT1120/ TCDT1120G
Vishay Semiconductors
Absolute Maximum Ratings
T
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
www.vishay.com
2
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Forward voltage
Junction capacitance
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
t
t
t = 1 min
2 mm from case, t ≤ 10 s
I
V
p
p
F
R
/T = 0.5, t
≤ 10 µs
= 50 mA
= 0, f = 1 MHz
Test condition
Test condition
Test condition
Test condition
p
≤ 10 ms
Symbol
V
C
F
j
Symbol
Symbol
Symbol
V
V
V
P
P
T
I
V
T
I
P
T
FSM
V
CBO
CEO
ECO
CM
amb
T
I
T
I
diss
diss
ISO
stg
sld
F
C
tot
R
j
j
Min
- 55 to + 100
- 55 to + 125
Value
Value
Value
3750
1.25
Typ.
100
125
100
150
125
250
260
60
90
90
50
50
5
3
7
Document Number 83532
Max
1.6
Rev. 1.6, 26-Oct-04
V
Unit
mW
Unit
mW
Unit
mW
mA
mA
mA
°C
°C
°C
°C
°C
RMS
V
A
V
V
V
Unit
pF
V