4N26-X009 Vishay, 4N26-X009 Datasheet - Page 3
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4N26-X009
Manufacturer Part Number
4N26-X009
Description
Transistor Output Optocouplers Phototransistor Out CTR>20%
Manufacturer
Vishay
Datasheet
1.4N26-X009.pdf
(9 pages)
Specifications of 4N26-X009
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor With Base
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
500 mV
Isolation Voltage
5300 Vrms
Current Transfer Ratio
50 % (Typ)
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4N25-X000/4N26-X000/4N27-X000/4N28-X000
Vishay Semiconductors
Notes
(1)
(2)
Note
Indicates JEDEC registered values.
TYPICAL CHARACTERISTICS
T
www.vishay.com
3
amb
ELECTRICAL CHARACTERISTICS
PARAMETER
COUPLER
Isolation test voltage
Saturation voltage, collector emitter
Resistance, input output
Capacitance, input output
CURRENT TRANSFER RATIO
PARAMETER
DC current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Rise and fall times
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
amb
= 25 °C, unless otherwise specified
i4n25_01
= 25 °C, unless otherwise specified.
Fig. 1 - Forward Voltage vs. Forward Current
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
I
(2)
F
- Forward Current (mA)
(2)
1
T
T
T
A
A
A
= - 55 °C
= 25 °C
= 85 °C
V
V
CE
CE
For technical questions, contact: optocoupler.answers@vishay.com
TEST CONDITION
= 10 V, I
10
= 10 V, I
I
CE
TEST CONDITION
TEST CONDITION
Optocoupler, Phototransistor Output,
= 2.0 mA, I
Peak, 60 Hz
V
F
F
f = 1 MHz
IO
= 10 mA, R
= 10 mA
Ω
100
= 500 V
(1)
with Base Connection
F
= 50 mA
L
= 100
PART
4N25
4N26
4N27
4N28
PART
SYMBOL
t
r
, t
Fig. 2 - Normalized Non-Saturated and Saturated CTR vs.
SYMBOL
f
V
SYMBOL
CE(sat)
i4n25_02
V
R
C
CTR
CTR
CTR
CTR
IO
IO
IO
1.5
1.0
0.5
0.0
DC
DC
DC
DC
0
V
T
Normalized to:
CE
A
MIN.
= 25 °C
= 10 V, I
CTR
5300
MIN.
100
MIN.
20
20
10
10
I
CE(sat)
F
- LED Current (mA)
F
LED Current
1
= 0.4 V
= 10 mA, T
TYP.
2.0
TYP.
0.5
TYP.
50
50
30
30
A
= 25 °C
10
Document Number: 81864
NCTR(SAT)
NCTR
MAX.
MAX.
MAX.
0.5
Rev. 1.0, 11-Mar-08
100
UNIT
UNIT
UNIT
GΩ
µs
pF
V
V
%
%
%
%