CNY17-3X007T Vishay, CNY17-3X007T Datasheet - Page 5

• Manufacturer Part Number: CNY17-3X007T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 100-200%
• Manufacturer: Vishay

Specifications of CNY17-3X007T

• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CNY17
Vishay Semiconductors
www.vishay.com
218
Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature
Fig. 7 - Current Transfer Ratio vs. Diode Current
icny17_09
icny17_07
icny17_08
1000
1000
100
100
30
25
20
15
10
5
0
10
10
Fig. 9 - Transistor Characteristics
1
- 25
0.1
0
4
3
2
1
I
(I
C
(T
F
0
= f (V
I
A
= 10 mA, V
F
= 75 °C, V
= 0
5
I
I
C
C
CE
/I
/I
V
T
F
)
I
F
CE
F
= f (T)
A
= f (I
(mA)
For technical questions, contact: [e-mail]
25
(°C)
1
(V)
CE
CE
F
)
= 5 V)
= 5 V)
10
Output, with Base Connection
Optocoupler, Phototransistor
50
I
B
I
I
I
I
I
B
B
B
B
B
= 40 µA
=
= 15 µA
= 10 µA
=
= 20 µA
1
2
3
4
5 µA
2 µA
15
10
75
icny17_12
icny17_10
icny17_11
Fig. 12 - Collector Emitter Off-state Current
0.001
0.01
1.2
1.1
1.0
0.9
0.1
40
30
20
10
0
1
Fig. 10 - Output Characteristics
0
0.1
0
Fig. 11 - Forward Voltage
I
CEO
(I
I
F
F
= f (V,T)
25
= 1 mA
= 0)
V
5
1
CE
I
C
= 35 V
V
I
= f (V
F
CE
V
(mA)
50
F
(V)
= f (I
CE
Document Number: 83606
)
V
10
F
CE
)
10
I
I
I
I
I
I
F
F
F
F
F
F
= 12 V
= 14 mA
= 12 mA
= 10 mA
= 7 mA
= 5 mA
= 2 mA
75
Rev. 1.6, 10-Dec-05
TA
25 °C
50 °C
75 °C
°C
15
100
100