ILQ615-2 Vishay, ILQ615-2 Datasheet - Page 3

• Manufacturer Part Number: ILQ615-2
• Description: Transistor Output Optocouplers Phototransistor Out Quad CTR 63-125%
• Manufacturer: Vishay

Specifications of ILQ615-2

• Isolation Voltage: 5300 Vrms
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 4
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-16
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Notes
(1)
(2)
Note
T
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83652
Rev. 1.5, 20-Dec-07
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
Package power dissipation ILD615
Derate linearly from 25 °C
Package power dissipation ILQ615
Derate linearly from 25 °C
Isolation test voltage
Creepage distance
Clearance distance
Isolation resistance
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current, -1, -2
Collector emitter leakage current, -3, -4
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance, junction to lead
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel isolation
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor Output
V
I
V
F
V
V
CE
IO
TEST CONDITION
= 10 mA, V
IO
R
= 500 V, T
= 5.0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
I
I
CE
V
V
I
V
I
E
F
R
(1)
CE
CE
R
(Dual, Quad Channel)
= 0.1 mA
= 10 mA
2.0 mm distance from case bottom
= 0.5 mA
= 10 µA
= 6.0 V
= 10 V
= 10 V
V
V
CE
IO
A
IO
= 25 °C
= 500 V, T
= 5.0 V
TEST CONDITION
= 500 V, T
t = 1.0 s
amb
CTRX/CTRY
amb
SYMBOL
BV
BV
= 100 °C
R
R
= 25 °C
I
I
V
C
C
C
CEO
CEO
V
R
THJL
THJL
I
BR
R
CE
CEO
ECO
IO
F
O
S
1 to 1
MIN.
10
500
1.0
6.0
7.0
70
12
SYMBOL
T
V
T
T
R
R
amb
T
ISO
stg
sld
IO
IO
j
Vishay Semiconductors
TYP.
1.15
0.01
10
750
500
6.8
2.0
5.0
0.8
30
25
14
- 55 to + 150
- 55 to + 100
ILD615/ILQ615
VALUE
≥ 10
≥ 10
5300
≥ 7.0
≥ 7.0
5.33
6.67
100
260
400
500
12
11
MAX.
2 to 1
100
1.3
10
50
www.vishay.com
mW/°C
mW/°C
UNIT
V
mW
mW
mm
mm
°C
°C
°C
°C
RMS
Ω
Ω
UNIT
VAC
K/W
K/W
µA
nA
nA
pF
pF
pF
V
V
V
V
Ω
3