ECG003B-G TriQuint, ECG003B-G Datasheet - Page 2

• Manufacturer Part Number: ECG003B-G
• Description: RF Amplifier DC-6 GHz +24dBm P1dB@1 GHz
• Manufacturer: TriQuint
• Type: Buffer Amplifierr

Specifications of ECG003B-G

• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 6000 MHz
• Noise Figure: 3.6 dB @ 2000 MHz
• Operating Supply Voltage: 7.2 V
• Supply Current: 110 mA (Typ) @ 9 V
• Maximum Operating Temperature: + 160 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1066902

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: [phone] • e-mail: [e-mail] • Web site: www.wj.com, www.TriQuint.com
1. Test conditions: T = 25º C, Supply Voltage = +9 V, Device Voltage = 7.2 V, Rbias = 16 Ω, Icc = 110 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. The performance data does not
account for losses attributed to recommended input and output series resistances shown in the application circuit on page 3.
22
20
18
16
14
45
40
35
30
25
500
500
Freq (MHz)
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
500
ECG003
InGaP HBT Gain Block
50
1000
1000
Gain vs. Frequency
Frequency (MHz)
OIP3 vs. Frequency
+25C
Frequency (MHz)
+25C
1500
1500
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
-20.36
-19.29
-17.78
-16.23
-14.71
-13.16
-12.14
-11.24
-10.30
S11 (dB)
-9.20
-7.76
-6.63
-5.54
-40C
-40C
2000
2000
Device S-parameters are available for download off of the website at: http://www.wj.com
+85C
+85C
S-Parameters (V
2500
2500
-118.71
-139.91
-161.53
174.59
147.71
120.30
S11 (ang)
-24.13
-51.50
-75.63
-98.28
92.76
70.28
-0.18
Typical Device RF Performance
MHz
dBm
dBm
dB
dB
dB
dB
Supply Bias = +9 V, R
3000
3000
device
+24.4
+38
100
-20
-15
3.9
21
-10
-15
-20
-25
-5
3.5
2.5
1.5
0
S21 (dB)
20.46
20.19
19.84
19.40
19.06
18.65
18.23
17.77
17.32
16.71
15.97
14.85
13.49
= +7.2 V, I
4
3
2
500
0
+24.4
500
+39
-19
-14
3.6
21
1
Noise Figure vs. Frequency
S11, S22 vs. Frequency
CC
= 110 mA, T = 25°C, calibrated to device leads)
Frequency (MHz)
1000
177.69
157.68
136.88
117.06
S21 (ang)
-19.87
-40.81
-59.45
97.71
78.13
59.26
40.27
20.70
Frequency (GHz)
2
0.41
20.4
+24
+39
900
-18
-13
3.5
bias
3
= 16 Ω, I
1900
+23
+36
1500
-16
-10
3.6
S11
19
4
-23.19
-23.08
-22.93
-22.61
-22.16
-21.61
-20.91
-20.11
-19.35
-18.62
-18.16
-18.05
-18.34
S12 (dB)
cc
5
+22.5
S22
2140
18.7
+35
-15
-10
3.7
= 110 mA
2000
6
Specifications and information are subject to change without notice
S12 (ang)
-13.40
-17.67
-23.92
-31.44
-41.28
-52.98
-66.03
-79.15
-0.38
-2.33
-4.52
-7.13
-9.76
+20.5
2400
18.2
+34
-13
3.7
30
25
20
15
10
-8
140
120
100
500
(3)
80
60
40
20
0
0.0
+18.7
3500
+25C
17.4
+31
-12
4.2
1000
-7
-13.95
-13.44
-12.45
-11.26
S22 (dB)
-9.96
-8.82
-7.63
-6.59
-5.32
-4.19
-3.10
-2.28
-1.78
2.0
P1dB vs. Frequency
Frequency (MHz)
+25C
1500
5800
Icc vs. Vde
14
12
-6
-3
4.0
Vde (V)
-40C
-123.04
-145.90
-167.85
171.00
150.44
128.81
107.78
S22 (ang)
-35.26
-68.47
-97.26
2000
87.09
67.70
-2.86
Page 2 of 4
6.0
-85C
2500
8.0
January 2008
3000
10.0