BGA 614 H6327 Infineon Technologies, BGA 614 H6327 Datasheet - Page 8

RF Amplifier RF SILICON MMIC

BGA 614 H6327

Manufacturer Part Number
BGA 614 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet

Specifications of BGA 614 H6327

Mounting Style
SMD/SMT
Operating Frequency
2 GHz
P1db
12 dBm
Noise Figure
2.1 dB
Operating Supply Voltage
3 V
Supply Current
40 mA
Maximum Power Dissipation
240 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA614H6327XT
Data Sheet
Device Current I
R
Noise figure F = f(f)
V
T
A
CC
Bias
= parameter in °C
2.5
1.5
0.5
= 5V, R
80
70
60
50
40
30
20
10
= parameter in
0
3
2
1
0
0
0
Bias
0.5
1
= 62 , Z
D
Frequency [GHz]
= f(V
2
1
0
V
CC
CC
S
1.5
3
)
= 50
[V]
16
4
2
27
2.5
5
+25°C
−20°C
+80°C
100
150
47
68
6
3
8
Device Current I
V
CC
= 5V,R
50
48
46
44
42
40
38
36
34
32
30
−40
Bias
−20
= parameter in
D
= f(T
0
T
A
A
)
20
[°C]
Measured Parameters
40
Rev. 2.1, 2008-03-28
60
56
62
68
BGA614
80

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