CBRHDSH1-100 Central Semiconductor, CBRHDSH1-100 Datasheet

Bridge Rectifiers High Density 1 A Dual In Line

CBRHDSH1-100

Manufacturer Part Number

CBRHDSH1-100

Description

Bridge Rectifiers High Density 1 A Dual In Line

Manufacturer

Central Semiconductor

Datasheet

1.CBRHDSH1-100.pdf (2 pages)

Specifications of CBRHDSH1-100

Product

Single Phase Bridge

Peak Reverse Voltage

100 V

Maximum Rms Reverse Voltage

71 V

Max Surge Current

20 A

Forward Voltage Drop

0.75 V

Maximum Reverse Leakage Current

10 uA

Maximum Operating Temperature

+ 125 C

Length

4.9 mm

Width

4.2 mm

Height

2.7 mm

Mounting Style

Through Hole

Minimum Operating Temperature

- 50 C

Package / Case

HD-DIP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CBRHDSH1-100 TR13

Manufacturer:

Central

Quantity:

90 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CBRHDSH1-100TR13

Manufacturer:

OMRON

Quantity:

101

Current page: 1 of 2
Download datasheet (600Kb)

MAXIMUM RATINGS: (T A =25°C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current

Peak Forward Surge Current

Power Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE: (T A =25°C unless otherwise noted)

SYMBOL

I R

BV R

V F

C J

SCHOTTKY BRIDGE RECTIFIER

SURFACE MOUNT

TEST CONDITIONS

V R =100V

V R =100V, T A =100°C

I R =150µA

I F =500mA

I F =1.0A

V R =4.0V, f=1.0MHz

CBRHDSH1-100

1 AMP SILICON

HIGH DENSITY

HD DIP CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHDSH1-100

is a full wave bridge rectifier in a durable epoxy surface

mount molded case, designed for low voltage full wave

rectification applications. The molding compound used

in this device has UL flammability classification 94V-O.

MARKING CODE: CSH110

FEATURES:

• Low Leakage Current (100nA TYP @ V RRM )

• Low Forward Voltage Drop Schottky Diodes

• High 1.0A Current Rating

MIN

100

SYMBOL

V R(RMS)

V RRM

I FSM

T stg

Θ JA

V R

P D

I O

T J

TYP

650

700

230

0.1

-50 to +125

-50 to +150

w w w. c e n t r a l s e m i . c o m

100

1.0

1.2

R3 (4-January 2010)

MAX

700

750

UNITS

°C/W

°C

µA

Related parts for CBRHDSH1-100

CBRHDSH1-100 Summary of contents

Page 1

... I F =1. =4.0V, f=1.0MHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: • ...

Page 2

... CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH110 R3 (4-January 2010) ...

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