VS-8E2TH06-M Vishay, VS-8E2TH06-M Datasheet - Page 5
![Rectifiers 8A 600V Hyperfast 22nsTO-220AC Ha Free](/photos/16/4/160467/vs-8e2tl06_sml.jpg)
VS-8E2TH06-M
Manufacturer Part Number
VS-8E2TH06-M
Description
Rectifiers 8A 600V Hyperfast 22nsTO-220AC Ha Free
Manufacturer
Vishay
Datasheet
1.VS-8E2TH06-E.pdf
(7 pages)
Specifications of VS-8E2TH06-M
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1 V
Recovery Time
255 ns
Forward Continuous Current
16 A
Max Surge Current
125 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Package / Case
TO-220AC
Diode Type
Fast Recovery
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
8A
Forward Voltage Vf Max
2.5V
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm Max
70A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 93166
Revision: 18-Aug-10
93166_09
60
50
40
30
20
10
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
T
J
= 25 °C
dI
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
/dt (A/μs)
T
For technical questions within your region, please contact one of the following:
J
(1) dI
(2) I
(3) t
0
= 125 °C
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E
I
F
F
- reverse recovery time measured
/dt - rate of change of current
- peak reverse recovery current
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
Hyperfast Rectifier, 8 A FRED Pt
I
RRM
F
= 8 A
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
93166_10
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
1000
- area under curve defined by t
100
10
RRM
t
D.U.T.
/dt - peak rate of change of
b
100
RRM
DiodesEurope@vishay.com
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
I
F
rr
Q
= 8 A
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
®
x I
(5)
2
RRM
Vishay Semiconductors
dI
rr
T
F
J
/dt (A/μs)
= 125 °C
rr
T
J
= 25 °C
www.vishay.com
F
/dt
1000
5