BYV26E-TAP Vishay, BYV26E-TAP Datasheet - Page 2

Rectifiers 1.0 Amp 1000 Volt 30 Amp IFSM

BYV26E-TAP

Manufacturer Part Number
BYV26E-TAP
Description
Rectifiers 1.0 Amp 1000 Volt 30 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of BYV26E-TAP

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
2.5 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Package / Case
SOD-57
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1A
Forward Voltage Vf Max
2.5V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
30A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Fig. 2 - Max. Reverse Current vs. Junction Temperature
959729
959728
1000
100
600
500
400
300
200
100
0.1
10
0
1
0
0
R
thJA
V
= 45 K/W
R
T
T
40
40
= V
j
j
- Junction Temperature (°C)
- Junction Temperature (°C)
RRM
R
thJA
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 100 K/W
80
80
For technical questions within your region, please contact one of the following:
I
120
120
F
= 0.5 A, I
V
I
R
TEST CONDITION
V
F
R
= V
= 1 A, T
amb
160
160
= V
Ultra Fast Avalanche Sinterglass
I
V
R
RRM
1000 V
RRM
200 V
400 V
600 V
800 V
R
I
R
= 100 μA
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
j
200
200
amb
= 175 °C
RRM
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
Diode
BYV26A
BYV26B
BYV26C
BYV26D
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26E
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
959730
959731
SYMBOL
0.001
0.01
DiodesEurope@vishay.com
V
V
V
V
V
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
(BR)R
(BR)R
(BR)R
(BR)R
(BR)R
V
V
0
1
t
t
t
t
t
I
I
R
R
rr
rr
rr
rr
rr
F
F
0
0
T
j
= 175 °C
T
1
R
amb
thJA
40
MIN.
1100
V
300
500
700
900
- Ambient Temperature (°C)
= 100 K/W
F
2
-
-
-
-
-
-
-
-
-
- Forward Voltage (V)
T
j
= 25 °C
80
3
R
TYP.
thJA
4
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 45 K/W
Document Number: 86040
5
160
MAX.
Rev. 1.7, 04-Aug-10
6
100
2.5
1.3
30
30
30
75
75
5
-
-
-
-
-
200
7
UNIT
μA
μA
ns
ns
ns
ns
ns
V
V
V
V
V
V
V

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