TGF2021-08 TriQuint, TGF2021-08 Datasheet - Page 7

• Manufacturer Part Number: TGF2021-08
• Description: RF GaAs DC-12GHz 8mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2021-08

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 3 S
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031677

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor: Phone [phone] Fax [phone] [e-mail] www.triquint.com
GATE
Units: millimeters (inches)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond pads #1-8:
Bond pads #9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004)
Bond pad #17:
Bond pad #18:
*Note: Bond pads #17 & 18 are alternate gate pads
Thickness: 0.100 (0.004)
that can be used for paralleling FETs.
2.418 [0.095]
2.323 [0.091]
2.105 [0.083]
1.849 [0.073]
1.593 [0.063]
1.337 [0.053]
1.081 [0.043]
0.825 [0.032]
0.569 [0.022]
0.313 [0.012]
0.096 [0.004]
0.000 [0.000]
Mechanical Drawing
1
8
7
6
5
4
3
2
(Gate)
(Vg*)
(Vg*)
17
18
10
11
12
13
14
15
16
9
0.090 x 0.090 (0.004 x 0.004)
0.090 x 0.090 (0.004 x 0.004)
0.090 x 0.090 (0.004 x 0.004)
2.122 [0.084]
0.297 [0.012]
DRAIN
Product Datasheet
TGF2021-08
August 7, 2007
Rev -
7