TGF2021-04 TriQuint, TGF2021-04 Datasheet - Page 3

• Manufacturer Part Number: TGF2021-04
• Description: RF GaAs DC-12GHz 4mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2021-04

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 1.5 S
• Gate-source Breakdown Voltage: - 8 V
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1077214

Efficiency Tuned:
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
TriQuint Semiconductor: Phone [phone] Fax [phone] [e-mail] www.triquint.com
Power Tuned:
θ
(channel to backside of
carrier)
JC
SYMBOL
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
Γ
Γ
Gain
Gain
Psat
PAE
Psat
PAE
Thermal Resistance
L
L
2/
2/
Parameter
Load Reflection coefficient
Load Reflection coefficient
Saturated Output Power
Saturated Output Power
Power Added Efficiency
Power Added Efficiency
RF CHARACTERIZATION TABLE
PARAMETER
Power Gain
Power Gain
THERMAL INFORMATION
Vd = 12 V
Idq = 300 mA
Pdiss = 3.6 W
(T
Test Conditions
A
= 25 °C, Nominal)
TABLE III
TABLE IV
Idq = 300mA
0.879 ∠ 167.5
0.852 ∠ 1725
Vd = 10V
36.8
11.5
50
11
36
59
(
T
148
o
CH
C)
1/
Idq = 300mA
0.849 ∠ 170.7
0.874 ∠ 166.3
Product Datasheet
Vd = 12V
(°C/W)
21.7
θ
37.5
36.7
48
11
55
11
JC
TGF2021-04
1.2 E+6
(HRS)
T
August 7, 2007
M
UNITS
dBm
dBm
dB
dB
%
%
-
-
Rev -
3