NESG4030M14-A CEL, NESG4030M14-A Datasheet - Page 4

• Manufacturer Part Number: NESG4030M14-A
• Description: RF Germanium Low Noise, SiGe: C HBT 2V,6mA@5.8GHz
• Manufacturer: CEL

Specifications of NESG4030M14-A

• Continuous Collector Current: 35 mA
• Mounting Style: SMD/SMT
• Power Dissipation: 105 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TYPICAL CHARACTERISTICS (T
4
0.0001
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.001
0.01
0.01
200
150
100
100
100
0.1
0.1
10
10
50
0
1
1
0.4
0.4
V
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
CE
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
25
= 1 V
= 3 V
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
Mounted on Glass Epoxy PWB
(1.08 cm
0.6
0.6
50
2
× 1.0 mm (t) )
75
100
0.8
0.8
A
A
BE
BE
(°C)
= +25°C, unless otherwise specified)
(V)
(V)
125
Data Sheet PU10728EJ02V0DS
150
1
1
0.0001
0.001
0.01
100
0.3
0.2
0.1
0.1
10
40
30
20
10
0
1
0
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
Collector to Emitter Voltage V
= 2 V
Base to Emitter Voltage V
Collector to Base Voltage V
2
1
0.6
4
180 A
μ
2
NESG4030M14
6
0.8
BE
f = 1 MHz
CB
(V)
CE
8
I
(V)
B
(V)
3
= 20 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
μ
μ
μ
μ
μ
μ
μ
μ
10
1