SIHB22N60S-E3 Vishay, SIHB22N60S-E3 Datasheet
SIHB22N60S-E3
Specifications of SIHB22N60S-E3
Related parts for SIHB22N60S-E3
SIHB22N60S-E3 Summary of contents
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... Single • dV/dt Ruggedness D • Effective C • Improved Transconductance • Improved t • Improved Gate Charge G • High Power Dissipation Capability • Compliant to RoHS Directive 2002/95/EC S N-Channel MOSFET 2 D PAK (TO-263) SiHB22N60S-GE3 SiHB22N60S- °C, unless otherwise noted ° 100 ° PAK (TO-263) ...
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... SiHB22N60S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance a Forward Transconductance Dynamic Input Capacitance ...
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... Document Number: 91395 S10-2554-Rev. C, 08-Nov- Top Bottom ° ° Top 2 1 Bottom 150 ° 150 °C Fig Normalized On-Resistance vs. Temperature J SiHB22N60S Vishay Siliconix ° 150 ° Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 180 T Junction Temperature (° www.vishay.com 10 3 ...
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... SiHB22N60S Vishay Siliconix 100 000 MHz iss rss 000 oss oss ds 1000 100 C rss Drain-to-Source Voltage ( Fig Typical Capacitance vs. Drain-to-Source Voltage 12 480 10 300 120 V DS 8.0 6.0 4.0 2.0 0 Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1000 • ...
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... Fig. 11b - Switching Time Waveforms Document Number: 91395 S10-2554-Rev. C, 08-Nov-10 125 150 - Square Wave Pulse Duration (s) Vary t required d(off) f SiHB22N60S Vishay Siliconix 725 700 675 650 625 600 575 550 - 100 120 140 160 180 T Junction Temperature (° Fig Drain-to-Source Breakdown Voltage 0 ...
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... SiHB22N60S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform Reverse recovery current Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...