DXTP19020DP5-13 Diodes Inc, DXTP19020DP5-13 Datasheet - Page 2

• Manufacturer Part Number: DXTP19020DP5-13
• Description: Bipolar Power BIPOLAR TRANS,PNP
• Manufacturer: Diodes Inc

Specifications of DXTP19020DP5-13

• Continuous Collector Current: - 8 A
• Dc Collector/base Gain Hfe Min: 45
• Maximum Operating Frequency: 176 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 20 V
• Emitter- Base Voltage Vebo: - 7 V
• Maximum Dc Collector Current: - 15 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: -20V
• Power Dissipation Pd: 1.3W
• Dc Collector Current: -8A
• Dc Current Gain Hfe: 450
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current
Power Dissipation @ T
Thermal Resistance, Junction to Ambient Air (Note 4) @T
Power Dissipation @ T
Thermal Resistance, Junction to Ambient Air (Note 5) @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Collector Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage (Reverse Blocking)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
DC Current Gain (Note 6)
Transition Frequency
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
Notes:
DXTP19020DP5
Document number: DS32012 Rev. 3 - 2
PowerDI is a registered trademark of Diodes Incorporated.
4. Device mounted on FR-4 PCB, 2 oz. copper, minimum recommended pad layout.
5. Device mounted on FR-4 PCB, 2 oz. copper, collector pad dimensions 0.42inch
6. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
A
A
= 25°C (Note 4)
= 25°C (Note 5)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
A
= 25°C
= 25°C
V
V
V
V
Symbol
V
V
V
V
(BR)CBO
(BR)CEO
(BR)ECX
(BR)ECO
(BR)EBO
I
C
I
CE(sat)
BE(sat)
BE(on)
C
h
www.diodes.com
CBO
EBO
f
t
obo
t
t
FE
t
ibo
T
d
s
r
f
2 of 5
Min
300
200
-25
-20
45
-4
-4
-7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
T
Symbol
Symbol
J
V
V
V
V
R
R
, T
I
P
P
CBO
CEO
ECO
EBO
CM
I
I
θ JA
θ JA
C
B
D
D
STG
2
.
-1050
-115
-220
-930
18.4
49.6
Typ
-8.6
-8.6
-8.2
450
290
176
266
-55
-50
-40
-97
<1
<1
⎯
70
25
⎯
36
23
-1150
-1000
-130
-145
-275
Max
900
400
0.5
-50
-47
50
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
-55 to +150
Unit
MHz
mV
mV
mV
Value
Value
nA
μA
nA
pF
pF
⎯
ns
V
V
V
V
V
96.1
41.7
-25
-20
-15
1.3
-4
-7
-8
-1
3
I
I
I
0.25V > V
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
V
I
I
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
EB
CB
= -100μA, R
= -100μA
= -100μA
= -1A, I
= -1A, I
= -8A, I
= -100mA, V
= -2A, V
= -100μA
= -10mA
= -2A, I
= -8A, I
= -8A, V
= -8A, V
= -15A, V
= -50mA, V
= -1A, V
= -I
= -25V
= -25V, T
= -5.6V
= -0.5V, f = 1MHz
= -10V, f = 1MHz
B2
DXTP19020DP5
= -50mA
B
B
B
B
B
Test Condition
CB
CE
CE
CE
CC
= -100mA
= -10mA
= -800mA
= -40mA
= -800mA
CE
> -0.25V
= -2V
= -2V
= -2V
= -10V,
amb
CE
BC
CE
= -2V
= -10V,
< 1kΩ or
= 100 °C
= -2V
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
°C
W
W
V
V
V
V
A
A
A
March 2010