ZXTP2008GTA Diodes Inc, ZXTP2008GTA Datasheet - Page 4

Bipolar Power 30V PNP Low Sat

ZXTP2008GTA

Manufacturer Part Number
ZXTP2008GTA
Description
Bipolar Power 30V PNP Low Sat
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXTP2008GTA

Continuous Collector Current
- 5.5 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
110 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
5.5 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTP2008GTA
Manufacturer:
DIODES
Quantity:
5 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
* Measured under pulsed conditions. Pulse width
ZXTP2008G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
SYMBOL
BV
BV
I
I
R < 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
ON
OFF
FE
CE(SAT)
BE(SAT)
BE(ON)
OBO
CBO
CER
CEO
EBO
amb
= 25°C unless otherwise stated)
MIN.
300 s; duty cycle
-7.0
100
100
-50
-50
-30
70
10
4
-1030 -1130
TYP.
-170
-900
-8.0
225
200
145
110
230
-70
-70
-40
-30
-40
-60
-70
<1
<1
<1
20
83
43
MAX. UNIT CONDITIONS
-1000
-210
-0.5
-0.5
300
-20
-20
-10
-45
-60
-85
-90
2%.
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
= -100 A
= -100 A
= -0.5A, I
= -1A, I
= -1A, I
= -2A, I
= -5.5A, I
= -5.5A, I
= -5.5A, V
= -10mA, V
= -1A, V
= -5A, V
= -1 A, RB < 1k
= -10mA *
= -20A, V
= -100mA, V
= -1A, V
= I
= -40V, T
= -40V, T
= -40V
= -40V
= -6V
= -10V, f = 1MHz *
B2
= -100mA
ISSUE 1 - JUNE 2005
B
B
B
CE
CE
CC
B
= -20mA *
= -200mA *
B
= -100mA *
B
CE
CE
amb
amb
= -500mA *
= -1V *
= -20mA *
= -500mA *
= -1V *
= -10V,
CE
= -1V *
CE
= -1V *
= -1V *
= 100°C
= 100°C
= -10V

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