MJE13005 Central Semiconductor, MJE13005 Datasheet
MJE13005
Manufacturer Part Number
MJE13005
Description
Bipolar Power NPN Fast SW
Manufacturer
Central Semiconductor
Datasheet
1.MJE13005.pdf
(2 pages)
Specifications of MJE13005
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
10
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Transistor Polarity
NPN
Mounting Style
Through Hole
Package / Case
TO-220AB
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
4 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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DESCRIPTION
The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high
speed power switching applications.
MAXIMUM RATINGS (T C =25°C unless otherwise noted)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation (T A =25°C)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise noted)
SYMBOL
I CEV
I CEV
I CEV
I CEV
I EBO
BV CEO
BV CEO
V CE(SAT)
V CE(SAT)
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
TEST CONDITIONS
V CE =600V , V BE(OFF) =1.5V (MJE13004)
V CE =600V , V BE(OFF) =1.5V, T C =100°C (MJE13004)
V CE =700V , V BE(OFF) =1.5V (MJE13005)
V CE =700V , V BE(OFF) =1.5V, T C =100°C (MJE13005)
V EB =9.0V
I C =10mA (MJE13004)
I C =10mA (MJE13005)
I C =1.0A, I B =0.2A
I C =2.0A, I B =0.5A
I C =4.0A, I B =1.0A
I C =2.0A, I B =0.5A, T C =100°C
I C =1.0A, I B =0.2A
I C =2.0A, I B =0.5A
I C =2.0A, I B =0.5A, T C =100°C
V CE =5.0V, I C =1.0A
V CE =5.0V, I C =2.0A
SYMBOL
V CEO
V CEV
V EBO
I C
I CM
I B
I BM
P D
P D
T J ,T stg
JA
JC
(SEE REVERSE SIDE)
MJE13004
300
600
MIN
300
400
10
8.0
-65 to +150
62.5
1.67
9.0
4.0
8.0
2.0
4.0
2.0
75
TYP
POWER TRANSISTOR
JEDEC TO-220 CASE
MJE13005
NPN SILICON
MAX
1.0
5.0
1.0
5.0
1.0
0.5
0.6
1.0
1.0
1.2
1.6
1.5
60
40
MJE13004
MJE13005
400
700
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
R0
DATA SHEET
UNITS
V
V
V
A
A
A
A
W
W
°C/W
°C/W
°C
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MJE13005 Summary of contents
Page 1
... DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (T C =25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (T A =25° ...
Page 2
... MJE13004 / MJE13005 ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL TEST CONDITIONS =10V =500mA, f=1.0MHz =10V =0, f=1.0kHz t V =125V =25µs, Duty Cycle =2.0A =5.0V, T BE(off TO-220 PACKAGE - MECHANICAL OUTLINE =2.0A =0. 1.0% =300V, I =0.4A, clamp B1 =100° NPN POWER TRANSISTOR MIN TYP MAX 4.0 65 0.1 0.7 4 ...