ZXTN25050DFHTA Diodes Inc, ZXTN25050DFHTA Datasheet - Page 4

• Manufacturer Part Number: ZXTN25050DFHTA
• Description: Bipolar Small Signal NPN 50V HIGH GAIN
• Manufacturer: Diodes Inc

Specifications of ZXTN25050DFHTA

• Dc Collector/base Gain Hfe Min: 300
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 4 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 1.25 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at T
Issue 3 - September 2006
© Zetex Semiconductors plc 2006
(*) Measured under pulsed conditions. Pulse width
NOTES:
Parameter
Collector-base breakdown voltage BV
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector cut-off current
Collector-emitter cut-off
current
Emitter cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current transfer
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
BV
BV
BV
BV
BV
I
I
I
V
V
V
h
f
C
t
t
t
t
CBO
CEX
EBO
T
(d)
(r)
(s)
(f)
FE
CE(sat)
BE(sat)
BE(on)
OBO
CBO
CEX
CEO
ECX
ECO
EBO
amb
= 25°C unless otherwise stated)
Min.
150
150
300
240
50
20
300 s; duty cycle
5
5
7
4
Typ.
180
180
160
180
190
160
970
870
450
410
200
111
429
140
7.4
8.3
67
<1
<1
50
40
12
65
8
-
Max.
1070
100
260
250
235
210
970
900
50
20
50
60
20
2%.
MHz I
Unit Conditions
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
ns
ns
V
V
V
V
V
V
A
ZXTN25050DFH
I
I
-1V < V
I
I
0.25V > V
I
I
V
V
V
-1V < V
V
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
C
C
C
E
E
E
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CE
EB
CB
CC
= 10mA
= 100 A, R
= 1A, I
= 1A, I
= 2A, I
= 3,5A, I
= 4A, I
= 4A, I
= 4A, V
= 10mA, V
= 1A, V
= 4A, V
= 50mA, V
= 100 A
= 100 A, R
= 100 A,
= 100 A
= I
= 5.6V
= 150V
= 150V, T
= 150V; R
= 10V, f = 1MHz
= 10V. I
B2
BE
BE
= 10mA.
B
B
B
B
B
www.zetex.com
CE
CE
CE
BC
< 0.25V
= 100mA
= 10mA
= 40mA
= 400mA
= 400mA
< 0.25V
B
(*)
C
= 175mA
= 2V
= 2V
= 2V
CE
CE
> -0.25V
BC
= 1A,
amb
BE
BE
= 2V
= 10V
= 100°C
(*)
(*)
(*)
1k or
1k
1k
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
or
or