ZTX560 Diodes Inc, ZTX560 Datasheet
ZTX560
Manufacturer Part Number
ZTX560
Description
Bipolar Small Signal PNP High V 500V
Manufacturer
Diodes Inc
Datasheet
1.ZTX560.pdf
(3 pages)
Specifications of ZTX560
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
500 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 0.15 A
Maximum Dc Collector Current
0.15 A
Power Dissipation
2 W
Maximum Operating Frequency
60 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
•
•
PARTMARKING
ZTX
560
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 2 - SEPTEMBER 2006
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
PARAMETER
Collector-base breakdown boltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
Excellent h
Low Saturation voltages
FE
characterisristics up to I
C
=50mA
SYMBOL
V
V
V
I
I
V
V
V
h
f
C
t
t
CBO
EBO
T
on
off
FE
(BR)CBO
BR(CEO)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
; I
CES
= 25°C)
1
MIN.
-500
-500
-5
100
80
15 typ
60
110 typ.
1.5 typ.
T
SYMBOL
V
V
V
I
I
P
CM
C
tot
j
CBO
CEO
EBO
:T
stg
MAX.
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
8
2%
UNIT
V
V
V
nA
nA
V
V
V
V
MHz
pF
ns
s
-55 to +150
VALUE
-500
-500
-500
-150
-5
1
CONDITIONS
I
I
I
V
V
I
I
I
I
I
I
I
V
f=50MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
B1
CB
EB
CE
CB
CE
=-100µA
=-100µA
=-10mA*
=-20mA, I
=-50mA, I
=-50mA, I
=-50mA, V
=-1mA, V
=-50mA, V
=-100mA, V
=-5mA, I
=-5V
=-20V, I
=-100V, I
=-500V; V
=-20V, f=1MHz
S E M I C O N D U C T O R S
CE
C
B2
B
B
B
ZTX560
CE
CE
=-10mA,
C
=-2mA*
=-10mA*
=-10mA*
CE
CE
=10mA
=-50mA,
=-10V
=-10V*
=-10V*
=-500V
UNIT
mA
mA
=-10V*
W
°C
V
V
V
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ZTX560 Summary of contents
Page 1
... EBO V -0.2 V CE(sat) -0 -0.9 V BE(sat) V -0.9 V BE(on) h 100 300 FE 80 300 15 typ f 60 MHz obo t 110 typ 1.5 typ. s off 2% 1 ZTX560 VALUE UNIT -500 V -500 -500 mA -150 -55 to +150 °C CONDITIONS I =-100µ =-10mA =-100µ =-500V; V =-500V =- =-20mA, I =-2mA ...
Page 2
... ZTX560 TYPICAL CHARACTERISTICS 2 ISSUE 2 - SEPTEMBER 2006 ...
Page 3
... Zetex Semiconductors plc 3701-04 Metroplaza Tower 1 Zetex Technology Park Hing Fong Road, Kwai Fong Chadderton, Oldham, OL9 9LL Hong Kong United Kingdom Telephone: (852) 26100 611 Telephone (44) 161 622 4444 Fax: (852) 24250 494 Fax: (44) 161 622 4446 asia.sales@zetex.com hq@zetex.com 3 ZTX560 ...