FCX458TA Diodes Inc, FCX458TA Datasheet

Bipolar Small Signal NPN High Voltage

FCX458TA

Manufacturer Part Number
FCX458TA
Description
Bipolar Small Signal NPN High Voltage
Manufacturer
Diodes Inc
Datasheet

Specifications of FCX458TA

Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.225 A
Maximum Dc Collector Current
0.225 A
Power Dissipation
1 W
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCX458TA
Manufacturer:
Diodes/Zetex
Quantity:
25 981
Part Number:
FCX458TA
Manufacturer:
DIODES
Quantity:
180
Part Number:
FCX458TA
Manufacturer:
ZETEX
Quantity:
20 000
Company:
Part Number:
FCX458TA
Quantity:
5 000
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
*
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
PARAMETER
Collector-Base Voltage
PARAMETER
Breakdown Voltages
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation at T
Operating and Storage Temperature Range
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages V
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
400 Volt V
P
tot
= 1 Watt
CEO
amb
=25°C
FCX558
N58
SYMBOL
V
V
V
I
I
I
V
V
h
f
C
t
t
CBO
CES
EBO
T
on
off
FE
(BR)CBO
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
MIN.
400
400
5
100
100
15
50
135 Typical
2260 Typical
3 - 85
amb
I
SYMBOL
V
V
V
I
P
T
C
CM
tot
j
CBO
CEO
EBO
= 25°C).
:T
stg
MAX.
100
100
100
0.2
0.5
0.9
0.9
300
5
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
ns
ns
2%
-65 to +150
VALUE
400
400
225
500
5
1
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
f=20MHz
V
I
I
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CB
CE
EB
CB
=100 A
=100 A
=10mA*
=20mA, I
=50mA, I
=50mA, I
=1mA, V
=50mA, V
=100mA, V
=10mA, V
=50mA, V
FCX458
=50mA, V
C
=5mA, I
=4V
=320V
=20V, f=1MHz
=320V
B
CE
B2
B
B
B
CE
CE
CE
C
=2mA*
=6mA*
=5mA*
=-10mA
=10V
=100V
C
CE
UNIT
=10V*
=10V*
=20V
mA
mA
W
°C
=10V**
V
V
V
E

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