BCX6825TA Diodes Inc, BCX6825TA Datasheet

Bipolar Small Signal NPN Low Saturation

BCX6825TA

Manufacturer Part Number
BCX6825TA
Description
Bipolar Small Signal NPN Low Saturation
Manufacturer
Diodes Inc
Datasheets

Specifications of BCX6825TA

Dc Collector/base Gain Hfe Min
160 at 500 mA at 1 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-89
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCX6825TA
Manufacturer:
DIODES
Quantity:
4 509
Part Number:
BCX6825TA
Manufacturer:
DIODES
Quantity:
150
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 – FEBRUARY 2007
FEATURES
*
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
For typical characteristics graphs see FMMT449 datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
High gain and low saturation voltages
amb
=25°C
SYMBOL MIN.
V
V
V
I
I
V
V
h
BCX68-16
BCX68-25
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(on)
obo
BCX69
BCX68
BCX68-16 – CC
BCX68-25 – CD
25
20
5
50
85
60
100
160
100
– CE
3 - 36
amb
TYP.
250
SYMBOL
V
V
V
I
I
P
T
CM
C
tot
j
CBO
CEO
EBO
:T
= 25°C unless otherwise stated).
stg
MAX. UNIT CONDITIONS.
0.1
10
10
0.5
1.0
375
250
400
25
V
V
V
V
V
MHz
pF
A
A
A
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f=100MHz
V
-65 to +150
C
C
E
C
C
C
C
C
C
C
C
CB
CB
EB
CB
VALUE
=100 A
=1A, I
=1A, V
=5mA, V
=500mA, V
=1A, V
=500mA, V
=500mA, V
=100mA, V
=100 A
=10mA
=5V
=25V
=25V, T
=10V, f=1MHz
25
20
5
2
1
1
B
BCX68
C
CE
CE
=100mA*
CE
=1V*
=1V*
a
SOT89
=150°C
CE
CE
CE
CE
=10V
B
=1V
=1V*
=1V
=5V,
C
UNIT
W
°C
A
A
V
V
V
E

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