ZXTP25040DFHTA Diodes Inc, ZXTP25040DFHTA Datasheet - Page 4
![Bipolar Small Signal PNP 40V HIGH GAIN](/photos/15/65/156591/sot-23_sml.jpg)
ZXTP25040DFHTA
Manufacturer Part Number
ZXTP25040DFHTA
Description
Bipolar Small Signal PNP 40V HIGH GAIN
Manufacturer
Diodes Inc
Datasheet
1.ZXTP25040DFHTA.pdf
(6 pages)
Specifications of ZXTP25040DFHTA
Dc Collector/base Gain Hfe Min
300
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
- 40 V
Emitter- Base Voltage Vebo
- 7 V
Continuous Collector Current
- 3 A
Maximum Dc Collector Current
- 9 A
Power Dissipation
1.25 W
Maximum Operating Frequency
270 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics (at T
Issue 5 - March 2008
© Zetex Semiconductors plc 2008
(*) Measured under pulsed conditions. Pulse width
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Static forward current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Turn-off time
Symbol
BV
BV
BV
BV
V
V
h
C
t
I
I
f
t
CBO
EBO
T
(on)
(off)
FE
CE(sat)
BE(sat)
BE(on)
OBO
CBO
CEO
ECO
EBO
AMB
= 25°C unless otherwise stated)
Min.
300
200
-45
-40
30
-3
-7
300 s; duty cycle
4
Typ.
-170
-165
-930
-830
17.4
75.5
-8.7
-8.2
450
300
270
320
-75
-65
<-1
<-1
-65
60
-1000
Max.
-260
-220
-900
-0.5
900
-50
-85
-50
2%.
MHz I
Unit
mV
mV
mV
mV
mV
nA
nA
pF
ns
ns
V
V
V
V
A
ZXTP25040DFH
Conditions
I
I
I
I
V
V
V
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
C
C
E
E
C
C
C
C
C
C
C
C
C
B1
CB
CB
EB
CB
CC
= -100 A
= -10mA
= -100uA
= -100 A
= -1A, I
= -1A, I
= -3A, I
= -3A, I
= -3A, V
= -10mA, V
= -1A, V
= -3A, V
= -50mA, V
= I
= -5.6V
= -45V
= -45V, T
= -10V, f = 1MHz
= -15V. I
B2
= -15mA.
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B
B
B
B
CE
CE
CE
= -20mA
= -100mA
= -300mA
= -300mA
(*)
C
amb
= -2V
= -2V
= -2V
CE
CE
= -750mA,
= -2V
= -10V
= 100°C
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)