ZXTP2012A Diodes Inc, ZXTP2012A Datasheet - Page 4
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ZXTP2012A
Manufacturer Part Number
ZXTP2012A
Description
Bipolar Small Signal 60V PNP Low Sat
Manufacturer
Diodes Inc
Datasheet
1.ZXTP2012ASTZ.pdf
(6 pages)
Specifications of ZXTP2012A
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
E-Line
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
- 3.5 A
Maximum Dc Collector Current
3.5 A
Power Dissipation
1000 mW
Maximum Operating Frequency
120 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTP2012A
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R 1k
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
-100
-100
100
100
-60
65
10
-7
-120
-120
-960
-850
TYP.
-8.1
-145
250
120
-14
200
120
370
-80
-50
-80
48
39
25
1
1
1
2%.
-1060
MAX. UNIT CONDITIONS
-960
-115
-210
-0.5
-0.5
-20
-20
-10
-20
300
-65
MHz I
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
ISSUE 2 - NOVEMBER 2005
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=-1A, I
=-2A, I
=-4A, I
=-1A, V
=-4A, V
=-10A, V
=-100 A
=-1 A, RB 1k
=-10mA*
=-100 A
=-0.1A, I
=-4A, I
=-4A, V
=-10mA, V
=-100mA, V
=-1A, V
=I
=-80V, T
=-80V, T
=-6V
=-80V
=-80V
=-10V, f=1MHz*
B2
=-100mA
B
B
B
B
CE
CE
=-100mA*
=-200mA*
=-400mA*
CE
CC
CE
=-400mA*
B
amb
amb
=-1V*
=-1V*
=-1V*
=-1V*
=-10mA*
=-10V,
CE
CE
=100 C
=100 C
=-1V*
=-10V