BCW68HTA Diodes Inc, BCW68HTA Datasheet - Page 2

• Manufacturer Part Number: BCW68HTA
• Description: Bipolar Small Signal PNP Low Saturation
• Manufacturer: Diodes Inc

Specifications of BCW68HTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
PARAMETER
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter
Cut-off Current
Emitter-Base Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Static
Forward
Current
Transfer
Transition Frequency
Output Capacitance
Input Capacitance
Noise Figure
Switching times:
Turn-On Time
Turn-Off Time
BCW68
BCW68F
BCW68G
BCW68H
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
V
V
I
I
V
V
h
h
h
f
C
C
N
t
t
CES
EBO
T
on
off
FE
FE
FE
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
BE(sat)
obo
ibo
amb
TBA
-45
-60
-5
100
35
160
60
250
100
100
= 25°C unless otherwise stated).
-0.7
170
250
350
12
2
-20
-10
-20
-0.3
-2
250
400
630
18
80
10
100
400
V
V
nA
nA
V
V
V
MHz I
pF
pF
dB
ns
ns
A
I
IC=-10 A
I
V
V
V
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
R
I
I
R
C
C
C
C
C
C
C
C
C
CEO
EBO
C
C
C
B1
CES
f=200Hz
CES
EBO
=-100mA, I
= -500mA, I
=-500mA,I
=-100mA, V
=-500mA, V
=-100mA, V
=-500mA, V
=-100mA, V
=-500mA, V
CB
EB
G
L
= -0.2mA, V
=-150mA
=-20mA, V
=150
=- I
=1K
=-10mA
=-0.5V, f =1MHz
=-10 A
=-10V, f =1MHz
=-45V, T
=-45V
=-4V
B2
=-15mA
f=1KH
B
B
B
=-50mA*
amb
CE
CE
CE
CE
CE
CE
= -10mA
=-50mA*
CE
CE
=-1V*
=-2V*
=-1V*
=-2V*
=-1V*
=-2V*
=150°C
=-10V
=- 5V