NST45011MW6T1G ON Semiconductor, NST45011MW6T1G Datasheet - Page 2

• Manufacturer Part Number: NST45011MW6T1G
• Description: Bipolar Small Signal DUAL MATCHED NPN XSTR 45V
• Manufacturer: ON Semiconductor

Specifications of NST45011MW6T1G

• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. h
3. V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (I
Collector −Emitter Breakdown Voltage, (I
Collector −Base Breakdown Voltage, (I
Emitter −Base Breakdown Voltage, (I
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product, (I
Output Capacitance, (V
Noise Figure, (I
FE(1)
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
BE(1)
C
C
C
C
C
C
C
C
C
C
= 10 mA, V
= 2.0 mA, V
= 2.0 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2.0 mA, V
= 10 mA, V
= 2.0 mA, V
/h
− V
FE(2)
BE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
C
B
B
CE
= 0.2 mA, V
is the absolute difference of one transistor compared to the other transistor within the same package.
CE
B
B
CE
CE
CE
CE
= 0.5 mA)
= 0.5 mA)
= 5.0 mA)
= 5.0 mA)
= 5.0 V)
= 5.0 V)
= 5.0 V)
= 5.0 V) (Note 2)
= 5.0 V)
= 5.0 V) (Note 3)
CB
(V
CB
CB
= 10 V, f = 1.0 MHz)
CE
= 30 V)
= 30 V, T
Characteristic
= 5 Vdc, R
E
C
C
= 1.0 mA)
A
= 10 mA, V
= 10 mA)
= 150°C)
C
C
(T
= 10 mA)
= 10 mA, V
S
A
= 2 kW, f = 1 kHz, BW = 200Hz)
= 25°C unless otherwise noted)
CE
EB
= 5 Vdc, f = 100 MHz)
= 0)
http://onsemi.com
2
V
h
BE(1) −
FE(1)/
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
BE(on)
C
CBO
h
NF
f
FE
T
ob
h
V
FE(2)
BE(2)
Min
150
200
700
850
580
100
6.0
0.9
45
50
50
−
−
−
−
−
−
−
−
Typ
300
750
890
660
1.0
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
FE
is used as numerator.
Max
500
250
600
800
950
700
770
5.0
2.0
4.5
15
10
−
−
−
−
−
−
−
MHz
Unit
mV
mV
mV
nA
dB
mA
pF
V
V
V
V
−