2N5209 Central Semiconductor, 2N5209 Datasheet

2N5209

Manufacturer Part Number

2N5209

Description

Bipolar Small Signal NPN Gen Pur SS

Manufacturer

Central Semiconductor

Datasheet

1.2N5210.pdf (2 pages)

Specifications of 2N5209

Dc Collector/base Gain Hfe Min

100 at 100 uA at 5 V

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Package / Case

TO-92

Collector- Emitter Voltage Vceo Max

50 V

Emitter- Base Voltage Vebo

4.5 V

Maximum Dc Collector Current

0.05 A

Power Dissipation

350 mW

Maximum Operating Frequency

30 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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DESCRIPTION

The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the

epitaxial planar process, designed for applications requiring high gain and low noise.

MAXIMUM RATINGS (T A =25°C)

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Power Dissipation (T C =25°C)

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS (T A =25°C)

SYMBOL

I CBO

I EBO

BV CBO

BV CEO

V CE(SAT)

V BE(ON)

h FE

f T

C cb

h fe

TEST CONDITIONS

V CB =35V

V EB =3.0V

I C =100µA

I C =1.0mA

I C =10mA, I B =1.0mA

V CE =5.0V, I C =1.0mA

V CE =5.0V, I C =100µA

V CE =5.0V, I C =1.0mA

V CE =5.0V, I C =10mA

V CE =5.0V, I C =500µA, f=20MHz

V CB =5.0V, I E =0, f=100kHz

V CE =5.0V, I C =1.0mA, f=1.0kHz

V CE =5.0V, I C =20µA, R S =22k ,

f=10Hz to 15.7kHz

V CE =5.0V, I C =20µA, R S =10k , f=1.0kHz

SYMBOL

V CEO

V CBO

V EBO

T J ,T stg

(SEE REVERSE SIDE)

I C

P D

MIN

100

150

2N5209

MAX

0.70

0.85

300

4.0

600

3.0

4.0

-65 to +150

NPN SILICON TRANSISTOR

4.5

350

357

125

1.0

TO-92 CASE

MIN

200

250

2N5209

2N5210

MAX

0.70

0.85

600

900

4.0

2.0

3.0

DATA SHEET

UNITS

°C/W

MHz

°C

Related parts for 2N5209

2N5209 Summary of contents

Page 1

... DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS (T A =25°C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (T C =25°C) ...

Page 2

... TO-92 PACKAGE - MECHANICAL OUTLINE SYMBOL A (DIA Lead Code NPN SILICON TRANSISTOR DIMENSIONS INCHES MILLIMETERS MIN MAX MIN 0.175 0.205 4.45 B 0.170 0.210 4.32 C 0.500 - 12.70 D 0.016 0.022 0.41 E 0.100 2.54 F 0.050 1.27 G 0.125 0.165 3.18 H 0.080 0.105 2.03 I 0.015 ...

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