CMPT3906TR Central Semiconductor, CMPT3906TR Datasheet
CMPT3906TR
Manufacturer Part Number
CMPT3906TR
Description
Bipolar Small Signal PNP Gen Purpose
Manufacturer
Central Semiconductor
Datasheet
1.CMPT3906TR.pdf
(2 pages)
Specifications of CMPT3906TR
Dc Collector/base Gain Hfe Min
60 at 0.1 mA at 1 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C)
SYMBOL
I CEV
I BL
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
* Device is Halogen Free by design
CMPT3904 CMPT3904G*
CMPT3906 CMPT3906G*
SILICON TRANSISTORS
COMPLEMENTARY
SURFACE MOUNT
SOT-23 CASE
TEST CONDITIONS
V CE =30V, V EB =3.0V
V CE =30V, V EB =3.0V
I C =10μA
I C =1.0mA
I E =10μA
I C =10mA, I B =1.0mA
I C =50mA, I B =5.0mA
I C =10mA, I B =1.0mA
I C =50mA, I B =5.0mA
V CE =1.0V, I C =0.1mA
V CE =1.0V, I C =1.0mA
V CE =1.0V, I C =10mA
V CE =1.0V, I C =50mA
V CE =1.0V, I C =100mA
NPN
PNP
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
complementary silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES: CMPT3904:
Θ JA
P D
I C
0.65
MIN
100
CMPT3904
CMPT3904G*
6.0
60
40
40
70
60
30
-
-
-
-
-
MAX
0.20
0.30
0.85
0.95
300
CMPT3904
CMPT3904G* CMPT3906G*
50
50
-
-
-
-
-
-
-
6.0
60
40
-65 to +150
CMPT3906:
CMPT3904G*: CG1
CMPT3906G*: CG2
200
350
357
MIN
0.65
100
5.0
CMPT3906
CMPT3906
CMPT3906G*
40
40
60
80
60
30
-
-
-
-
-
5.0
40
40
MAX
w w w. c e n t r a l s e m i . c o m
0.25
0.40
0.85
0.95
300
50
50
-
-
-
-
-
-
-
R7 (1-February 2010)
C1A
C2A
UNITS
UNITS
°C/W
mW
mA
nA
nA
°C
V
V
V
V
V
V
V
V
V
V
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CMPT3906TR Summary of contents
Page 1
... V CE =1.0V =10mA =1.0V =50mA =1.0V =100mA DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMPT3904: CMPT3906: ...
Page 2
CMPT3904 CMPT3904G* CMPT3906 CMPT3906G* SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued =25°C) CMPT3904G* SYMBOL TEST CONDITIONS =20V =10mA, f=100MHz =5.0V =0, f=1.0MHz C ib ...