2N3702 Central Semiconductor, 2N3702 Datasheet

Bipolar Small Signal PNP -25V -500mA BULK HFE/300

2N3702

Manufacturer Part Number

2N3702

Description

Bipolar Small Signal PNP -25V -500mA BULK HFE/300

Manufacturer

Central Semiconductor

Datasheet

1.2N3702.pdf (2 pages)

Specifications of 2N3702

Dc Collector/base Gain Hfe Min

60 at 0.05 mA at 5 V

Configuration

Single

Transistor Polarity

PNP

Mounting Style

Through Hole

Package / Case

TO-18

Collector- Emitter Voltage Vceo Max

25 V

Emitter- Base Voltage Vebo

5 V

Continuous Collector Current

0.45 A

Power Dissipation

625 mW

Maximum Operating Frequency

100 MHz

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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DESCRIPTION

The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current

general purpose amplifier applications.

MAXIMUM RATINGS (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Power Dissipation (T C =25°C)

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS (T A =25°C)

SYMBOL

I CBO

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

TEST CONDITIONS

V CB =90V

V CB =90V, T A =150°C

V EB =5.0V

I C =100µA

I C =30mA

I E =100µA

I C =150mA, I B =15mA

I C =500mA, I B =50mA

I C =150mA, I B =15mA

V CE =10V, I C =0.1mA

V CE =10V, I C =10mA

V CE =10V, I C =150mA

V CE =10V, I C =150mA , T A =-55°C

V CE =10V, I C =500mA

V CE =10V, I C =1.0A

SYMBOL

V CBO

V CEO

V EBO

T J ,T stg

P D

Θ JA

Θ JC

I C

(Continue)

MIN

140

100

7.0

2N3700

MAX

0.2

0.5

1.1

300

-65 to +200

NPN SILICON TRANSISTOR

2N3700

2N3701

140

500

350

97.2

JEDEC TO-18 CASE

7.0

1.0

1.8

MIN

140

7.0

2N3700

2N3701

MAX

0.2

0.5

1.1

100

120

100

DATA SHEET

UNITS

°C/W

µA

°C

Related parts for 2N3702

2N3702 Summary of contents

Page 1

... DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (T A =25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (T C =25°C) Operating and Storage Junction Temperature ...

Page 2

SYMBOL TEST CONDITIONS =10V =50mA, f=20MHz =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz =5.0V ...

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