ZXTP25100BFHTA Diodes Inc, ZXTP25100BFHTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP25100BFHTA
• Description: Bipolar Small Signal PNP Medium Power
• Manufacturer: Diodes Inc

Specifications of ZXTP25100BFHTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 1810 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
(forward blocking)
Collector-emitter
breakdown voltage (base
open)
Emitter-collector
breakdown voltage
(reverse blocking)
Emitter-base breakdown
voltage
Collector cut-off current
Collector emitter cut-off
current
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
Output capacitance
Turn-on time
Turn-off time
Symbol
BV
BV
BV
BV
BV
I
I
I
V
V
V
h
f
C
t
t
CBO
CEX
EBO
T
(on)
(off)
FE
CE(sat)
BE(sat)
BE(on)
OBO
CBO
CEX
CEO
ECX
EBO
AMB
Min.
-140
-140
-100
100
55
15
= 25°C unless otherwise stated)
-7
-7
300 s; duty cycle
Typ.
-165
-165
-125
-240
-100
-215
-900
-830
4
-8.2
200
105
200
384
<-1
<-1
-60
8.2
25
15
31
-
-1000
Max.
-100
-350
-130
-295
-950
300
-50
-20
-50
-90
25
2%.
Unit
MHz
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
ns
V
V
V
V
V
A
ZXTP25100BFH
Conditions
I
I
R
-0.25V < V
I
I
R
-0.25V < V
I
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f = 100MHz
V
V
I
C
C
C
E
E
R
-0.25V < V
C
C
C
C
C
C
C
C
C
C
B1
BE
BC
CB
CB
CE
EB
CB
CC
BE
= -100 A,
= -100 A
= -0.5A, I
= -0.5A, I
= -1A, I
= -2A, I
= -2A, I
= -2A, V
= -10mA, V
= -1A, V
= -2A, V
= -100mA, V
= -100 A
= -100 A,
= -10mA
= I
= -112V;
= -5.6V
< 1k
= -112V
= -112V, T
= -10V, f = 1MHz
= -10V, I
< 1k
< 1k
B2
= -50mA
B
B
B
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BE
BC
CE
CE
CE
or
or
BE
B
B
= -100mA
= -200mA
= -200mA
or
(*)
C
= -50mA
= -10mA
< 0.25V
= -2V
= -2V
= -2V
< 1V
CE
= -500mA,
< 1V
AMB
CE
= -2V
= -5V
= 100°C
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)